STMicroelectronics_STD110N8F6

STMicroelectronics
STD110N8F6  
Single FETs, MOSFETs

STMicroelectronics
STD110N8F6
278-STD110N8F6
Ersa
STMicroelectronics-STD110N8F6-datasheets-4896617.pdf
MOSFET N-CH 80V 80A DPAK
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STD110N8F6 Description

STD110N8F6 Description

The STD110N8F6 is a high-performance MOSFET (Metal Oxide) device manufactured by STMicroelectronics. This N-Channel device is part of the STripFET™ F6 series and is designed for applications requiring high efficiency and robust performance. The STD110N8F6 features a drain-to-source voltage (Vdss) of 80V, a continuous drain current (Id) of 80A at 25°C, and a maximum power dissipation of 167W at case temperature (Tc). It is available in a DPAK package, suitable for surface mount applications.

STD110N8F6 Features

  • High Voltage and Current Ratings: The STD110N8F6 can handle a drain-to-source voltage of up to 80V and a continuous drain current of 80A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: The device features a low on-resistance (Rds On) of 6.5mOhm at 40A and 10V, which contributes to high efficiency and reduced power losses.
  • Fast Switching Speed: With a maximum gate threshold voltage (Vgs(th)) of 4.5V at 250µA, the STD110N8F6 offers fast switching capabilities, ideal for applications requiring quick response times.
  • Low Input Capacitance: The device has a maximum input capacitance (Ciss) of 9130 pF at 40V, which helps reduce charging and discharging times, further improving switching performance.
  • Robust Gate Charge Handling: The STD110N8F6 can handle a maximum gate charge (Qg) of 150 nC at 10V, ensuring reliable operation under various gate drive conditions.
  • Compliance with Industry Standards: The device is compliant with the RoHS3 directive and is unaffected by REACH regulations, ensuring environmental compliance and ease of use in global markets.

STD110N8F6 Applications

The STD110N8F6 is ideal for a wide range of applications, including:

  1. Power Electronics: Due to its high voltage and current ratings, the STD110N8F6 is well-suited for power electronics applications such as power supplies, motor drives, and battery management systems.
  2. Industrial Automation: The device's robust performance and fast switching capabilities make it an excellent choice for industrial automation applications, including motor control and robotics.
  3. Automotive Applications: The STD110N8F6 can be used in various automotive applications, such as electric vehicle charging systems, power windows, and HVAC systems, where high efficiency and reliability are critical.
  4. Renewable Energy: The device's high efficiency and robust performance make it suitable for renewable energy applications, such as solar inverters and wind turbine control systems.

Conclusion of STD110N8F6

The STD110N8F6 from STMicroelectronics is a high-performance MOSFET designed for demanding applications requiring high efficiency, robust performance, and fast switching capabilities. Its unique combination of high voltage and current ratings, low on-resistance, and compliance with industry standards make it an ideal choice for power electronics, industrial automation, automotive, and renewable energy applications. With its advanced features and advantages over similar models, the STD110N8F6 is a reliable and efficient solution for engineers and designers looking to optimize their power electronic systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STD110N8F6 Documents

Download datasheets and manufacturer documentation for STD110N8F6

Ersa STD110N8F6      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD110N8F6      

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