STMicroelectronics_STH150N10F7-2
original

STMicroelectronics
STH150N10F7-2

278-STH150N10F7-2
PDF Datasheet
N-Ch MOSFET 100V 110A 3.9mR H2PAK-2 SMT
39 Weeks

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Tech Specifications

Package/Case
TO-263-3
Continuous Drain Current (ID)
110A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
3.9mR
Drain to Source Voltage (Vdss)
100V
Fall Time
33ns
Gate to Source Voltage (Vgs)
20V
Height
4.8mm
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STH150N10F7-2 Description

N-Channel 100 V 110A (Tc) 250W (Tc) Surface Mount H2PAK-2

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