STMicroelectronics_SCTWA30N120

STMicroelectronics
SCTWA30N120  
Single FETs, MOSFETs

STMicroelectronics
SCTWA30N120
278-SCTWA30N120
Ersa
STMicroelectronics-SCTWA30N120-datasheets-9052619.pdf
IC POWER MOSFET 1200V HIP247
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    SCTWA30N120 Description

    The SCTWA30N120 is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of high-power applications, including power electronics, motor control, and automotive systems.

    Description:

    The SCTWA30N120 is an N-channel MOSFET with a voltage rating of 120V and a continuous drain current of 30A. It is available in a TO-220 package, which is a popular choice for high-power applications due to its robustness and ease of heat dissipation.

    Features:

    1. High Power: The SCTWA30N120 is designed to handle high power levels, making it suitable for use in demanding applications.
    2. Low On-Resistance: The device has a low on-resistance, which helps to minimize power losses and improve efficiency.
    3. High Switching Speed: The MOSFET has a fast switching speed, which makes it suitable for use in high-frequency applications.
    4. Robust Package: The TO-220 package provides excellent thermal performance and is resistant to mechanical stress, making it ideal for use in harsh environments.
    5. Integrated Protection Features: The device includes integrated protection features such as over-temperature protection and over-current protection, which help to ensure reliable operation.

    Applications:

    1. Power Electronics: The SCTWA30N120 is well-suited for use in power electronics applications, such as power supplies and DC-DC converters.
    2. Motor Control: The MOSFET can be used in motor control applications, including brushless DC motors and stepper motors.
    3. Automotive Systems: The device is suitable for use in automotive systems, such as electric power steering and braking systems.
    4. Industrial Control: The SCTWA30N120 can be used in industrial control applications, such as robotics and automation systems.
    5. Renewable Energy: The MOSFET can be used in renewable energy applications, such as solar power inverters and wind turbine converters.

    Overall, the SCTWA30N120 is a versatile and reliable MOSFET that is well-suited for a wide range of high-power applications. Its robust package, low on-resistance, and integrated protection features make it a popular choice for engineers and designers working on power electronics and motor control systems.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Number of Channels
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Material
    Transistor Polarity
    Package Length
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    SCTWA30N120 Documents

    Download datasheets and manufacturer documentation for SCTWA30N120

    Ersa SCTWA30N120      

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