STMicroelectronics

STF10N60M2

STF10N60M2 Description

The STF10N60M2 is a high-performance MOSFET (Metal Oxide) manufactured by STMicroelectronics, designed for applications requiring robust power handling and efficient switching. This N-channel device offers a drain-to-source voltage (Vdss) of 600V, making it suitable for high-voltage applications. With a continuous drain current (Id) of 7.5A at 25°C, it provides ample current handling capabilities. The device is available in a through-hole TO220FP package, ensuring reliable mechanical and thermal performance.

STF10N60M2 Features

• High Voltage Rating: The STF10N60M2 boasts a drain-to-source voltage (Vdss) of 600V, making it ideal for high-voltage applications.
• Robust Current Handling: With a continuous drain current (Id) of 7.5A at 25°C, this MOSFET can handle significant current loads.
• Low On-Resistance: The device features a low on-resistance (Rds On) of 600mOhm at 4A and 10V, ensuring efficient power dissipation.
• High Input Capacitance: The STF10N60M2 has an input capacitance (Ciss) of 400 pF at 100V, enabling fast switching and reduced power loss.
• Low Gate Charge: The gate charge (Qg) is 13.5 nC at 10V, contributing to lower switching losses and improved efficiency.
• Wide Gate Voltage Range: The device operates with a gate-source voltage (Vgs) range of ±25V, providing flexibility in gate drive circuit design.
• Compliance with Regulations: The STF10N60M2 is REACH unaffected and RoHS3 compliant, ensuring environmental and safety compliance.

STF10N60M2 Applications

The STF10N60M2 is well-suited for various applications where high voltage and current handling are required, including:

• Power Supplies: The high voltage and current ratings make it ideal for power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
• Industrial Control: The device's robust performance characteristics make it suitable for motor control and industrial automation applications.
• Automotive Electronics: The STF10N60M2 can be used in automotive electronics, such as electric vehicle (EV) charging systems and power management circuits.
• RF Power Amplifiers: The low gate charge and high input capacitance make it suitable for RF power amplifiers in communication systems.

Conclusion of STF10N60M2

The STF10N60M2 is a versatile and high-performance MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low on-resistance, and compliance with environmental regulations. Its unique features make it an excellent choice for a wide range of applications, including power supplies, industrial control, automotive electronics, and RF power amplifiers. With its robust performance and reliability, the STF10N60M2 is a valuable addition to any electronic design engineer's toolkit.