STP18N60M2 is a high-power, high-voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including power electronics, motor control, and automotive systems.
Description:
The STP18N60M2 is an N-channel enhancement mode field-effect transistor (MOSFET) with a drain-source voltage (Vds) of 600 volts and a continuous drain current (Id) of 18 amperes. It features a low on-state resistance (Rds(on)) of 0.45 ohms maximum, which helps to minimize power dissipation and improve efficiency.
Features:
High drain-source voltage (Vds) of 600 volts
Continuous drain current (Id) of 18 amperes
Low on-state resistance (Rds(on)) of 0.45 ohms maximum
Enhancement mode operation
Suitable for use in a wide range of applications, including power electronics, motor control, and automotive systems
Applications:
Power electronics: The STP18N60M2 can be used in power electronic applications such as DC-DC converters, power supplies, and motor controllers.
Motor control: The MOSFET's high voltage and current ratings make it suitable for use in motor control applications, including brushless DC motors and stepper motors.
Automotive systems: The STP18N60M2 can be used in various automotive applications, such as electric power steering, air conditioning systems, and window lift systems.
Industrial control: The MOSFET can be used in industrial control applications, such as robotics, conveyor systems, and manufacturing equipment.
In summary, the STP18N60M2 is a high-power, high-voltage N-channel MOSFET transistor that offers excellent performance and reliability in a wide range of applications. Its key features include a high drain-source voltage, continuous drain current, and low on-state resistance, making it suitable for use in power electronics, motor control, automotive systems, and industrial control applications.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STP18N60M2 Documents
Download datasheets and manufacturer documentation for STP18N60M2
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
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