STMicroelectronics_STP18N60M2

STMicroelectronics
STP18N60M2  
Single FETs, MOSFETs

STMicroelectronics
STP18N60M2
278-STP18N60M2
Ersa
STMicroelectronics-STP18N60M2-datasheets-4057716.pdf
MOSFET N-CH 600V 13A TO220
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    STP18N60M2 Description

    STP18N60M2 is a high-power, high-voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including power electronics, motor control, and automotive systems.

    Description:

    The STP18N60M2 is an N-channel enhancement mode field-effect transistor (MOSFET) with a drain-source voltage (Vds) of 600 volts and a continuous drain current (Id) of 18 amperes. It features a low on-state resistance (Rds(on)) of 0.45 ohms maximum, which helps to minimize power dissipation and improve efficiency.

    Features:

    1. High drain-source voltage (Vds) of 600 volts
    2. Continuous drain current (Id) of 18 amperes
    3. Low on-state resistance (Rds(on)) of 0.45 ohms maximum
    4. Enhancement mode operation
    5. Suitable for use in a wide range of applications, including power electronics, motor control, and automotive systems

    Applications:

    1. Power electronics: The STP18N60M2 can be used in power electronic applications such as DC-DC converters, power supplies, and motor controllers.
    2. Motor control: The MOSFET's high voltage and current ratings make it suitable for use in motor control applications, including brushless DC motors and stepper motors.
    3. Automotive systems: The STP18N60M2 can be used in various automotive applications, such as electric power steering, air conditioning systems, and window lift systems.
    4. Industrial control: The MOSFET can be used in industrial control applications, such as robotics, conveyor systems, and manufacturing equipment.

    In summary, the STP18N60M2 is a high-power, high-voltage N-channel MOSFET transistor that offers excellent performance and reliability in a wide range of applications. Its key features include a high drain-source voltage, continuous drain current, and low on-state resistance, making it suitable for use in power electronics, motor control, automotive systems, and industrial control applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STP18N60M2 Documents

    Download datasheets and manufacturer documentation for STP18N60M2

    Ersa ST(B, P, W)18N60M2      
    Ersa ST(B, P, W)18N60M2      

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