STMicroelectronics
STD6N60M2  
Single FETs, MOSFETs

STMicroelectronics
STD6N60M2
278-STD6N60M2
Ersa
STMicroelectronics-STD6N60M2-datasheets-3778168.pdf
MOSFET N-CH 600V 4.5A DPAK
In Stock : 2328

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STD6N60M2 Description

STD6N60M2 Description

The STD6N60M2 is a high-performance MOSFET N-CH 600V 4.5A DPAK from STMicroelectronics. This device is designed for applications requiring high voltage and current handling capabilities, making it ideal for use in power electronics, industrial control, and automotive systems. With its advanced technology and superior performance, the STD6N60M2 stands out as a reliable and efficient solution for demanding applications.

STD6N60M2 Features

  • Technology: MOSFET (Metal Oxide) with MDmesh™ II Plus series for enhanced performance.
  • Drain to Source Voltage (Vdss): 600V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 4.5A, ensuring robust current handling capabilities.
  • Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V, providing low on-resistance for efficient power dissipation.
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, enabling fast switching and reduced power loss.
  • Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V, contributing to high-speed operation.
  • Vgs (Max): ±25V, allowing for a wide range of gate voltage compatibility.
  • Vgs(th) (Max) @ Id: 4V @ 250µA, ensuring reliable threshold voltage performance.
  • Power Dissipation (Max): 60W (Tc), suitable for high-power applications.
  • Mounting Type: Surface Mount, facilitating easy integration into various designs.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), providing excellent resistance to moisture and environmental factors.
  • RoHS Status: ROHS3 Compliant, ensuring environmental sustainability.
  • REACH Status: REACH Unaffected, adhering to strict European chemical regulations.

STD6N60M2 Applications

The STD6N60M2 is ideal for a wide range of applications where high voltage, current, and power handling are required. Some specific use cases include:

  1. Power Electronics: In power supplies, converters, and inverters where high voltage and current ratings are necessary.
  2. Industrial Control: For motor drives, robotics, and automation systems that demand reliable and efficient power management.
  3. Automotive Systems: In electric vehicles, hybrid vehicles, and automotive power management systems that require high-voltage operation.
  4. Renewable Energy: In solar inverters, wind power systems, and energy storage solutions that need robust and efficient power conversion.

Conclusion of STD6N60M2

The STD6N60M2 from STMicroelectronics is a powerful and efficient MOSFET N-CH 600V 4.5A DPAK designed for high-performance applications. Its advanced technology, superior performance, and compliance with industry standards make it an ideal choice for power electronics, industrial control, and automotive systems. With its unique features and advantages over similar models, the STD6N60M2 is a reliable and efficient solution for demanding applications in various industries.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD6N60M2 Documents

Download datasheets and manufacturer documentation for STD6N60M2

Ersa STx6N60M2      
Ersa STx6N60M2      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service