STMicroelectronics

STD10N60M2  

Single FETs, MOSFETs

STMicroelectronics' STD10N60M2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a wide range of applications. Here's a description of the model, its features, and potential applications:

Model Description:

The STD10N60M2 is an N-channel enhancement mode field-effect transistor with a logic level gate. It is designed to provide high efficiency and fast switching in various power electronic applications.

Features:

1. High Voltage and Current Ratings: The STD10N60M2 is rated for a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 10.5A (Tc = 25°C), making it suitable for high-power applications.

2. Logic Level Gate: The device features a logic level gate, which allows it to be easily driven by logic signals from microcontrollers or other digital circuits.

3. Low On-State Resistance (RDS(on)): With a typical RDS(on) of 0.55 ohms (at VDS = 10V, ID = 4.3A), the STD10N60M2 offers low conduction losses, improving overall system efficiency.

4. Fast Switching Characteristics: The device has a low gate charge (Qg) and a fast switching time, which makes it suitable for high-frequency applications.

5. Robustness: The STD10N60M2 is designed with a robust construction, including an integrated diode for protection against reverse-voltage transients.

6. Thermal Performance: The device has a low thermal resistance (RθJC) of 85°C/W, which helps in efficient heat dissipation and ensures reliable operation in various thermal environments.

7. Package Options: The STD10N60M2 is available in a variety of packages, including TO-220 and DPAK, to suit different application requirements.

Applications:

1. Motor Control: The STD10N60M2 is suitable for use in motor control applications, such as brushless DC (BLDC) motor drivers and AC motor speed controllers.

2. Power Supplies: The device can be used in power supply applications, including switching power supplies (SMPS) and power factor correction (PFC) circuits.

3. Inverters: The STD10N60M2 is suitable for use in DC-AC inverters, such as those used in renewable energy systems and uninterruptible power supplies (UPS).

4. Battery Management Systems: The MOSFET can be used in battery management systems for electric vehicles (EVs) and energy storage systems, where high efficiency and fast switching are crucial.

5. Industrial Automation: The device can be used in various industrial automation applications, such as robotic control systems and programmable logic controllers (PLCs).

6. Telecommunications: The STD10N60M2 can be used in telecommunications equipment, such as power supplies and signal conditioning circuits.

7. LED Lighting: The MOSFET is suitable for use in LED lighting applications, including streetlights and indoor lighting systems, where high efficiency and fast switching are important.

The STD10N60M2 is a versatile and high-performance MOSFET that can be used in a wide range of power electronic applications, offering high efficiency, fast switching, and robust performance.

STD10N60M2 Documents

Download datasheets and manufacturer documentation for STD10N60M2

Datasheets :

STx10N60M2      

PCN Packaging :

Reel Design Change 22/Aug/2022