STMicroelectronics_STD10N60M2
original

STMicroelectronics
STD10N60M2

278-STD10N60M2
PDF Datasheet
600V 7.5A N-CH MOSFET DPAK
16 Weeks

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Tech Specifications

Package / Case
DPAK
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
560mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
600mR
Fall Time
13.2ns
Gate to Source Voltage (Vgs)
25V
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STD10N60M2 Description

STMicroelectronics' STD10N60M2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a wide range of applications. Here's a description of the model, its features, and potential applications:

Model Description:

The STD10N60M2 is an N-channel enhancement mode field-effect transistor with a logic level gate. It is designed to provide high efficiency and fast switching in various power electronic applications.

Features:

  1. High Voltage and Current Ratings: The STD10N60M2 is rated for a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 10.5A (Tc = 25°C), making it suitable for high-power applications.

  2. Logic Level Gate: The device features a logic level gate, which allows it to be easily driven by logic signals from microcontrollers or other digital circuits.

  3. Low On-State Resistance (RDS(on)): With a typical RDS(on) of 0.55 ohms (at VDS = 10V, ID = 4.3A), the STD10N60M2 offers low conduction losses, improving overall system efficiency.

  4. Fast Switching Characteristics: The device has a low gate charge (Qg) and a fast switching time, which makes it suitable for high-frequency applications.

  5. Robustness: The STD10N60M2 is designed with a robust construction, including an integrated diode for protection against reverse-voltage transients.

  6. Thermal Performance: The device has a low thermal resistance (RθJC) of 85°C/W, which helps in efficient heat dissipation and ensures reliable operation in various thermal environments.

  7. Package Options: The STD10N60M2 is available in a variety of packages, including TO-220 and DPAK, to suit different application requirements.

Applications:

  1. Motor Control: The STD10N60M2 is suitable for use in motor control applications, such as brushless DC (BLDC) motor drivers and AC motor speed controllers.

  2. Power Supplies: The device can be used in power supply applications, including switching power supplies (SMPS) and power factor correction (PFC) circuits.

  3. Inverters: The STD10N60M2 is suitable for use in DC-AC inverters, such as those used in renewable energy systems and uninterruptible power supplies (UPS).

  4. Battery Management Systems: The MOSFET can be used in battery management systems for electric vehicles (EVs) and energy storage systems, where high efficiency and fast switching are crucial.

  5. Industrial Automation: The device can be used in various industrial automation applications, such as robotic control systems and programmable logic controllers (PLCs).

  6. Telecommunications: The STD10N60M2 can be used in telecommunications equipment, such as power supplies and signal conditioning circuits.

  7. LED Lighting: The MOSFET is suitable for use in LED lighting applications, including streetlights and indoor lighting systems, where high efficiency and fast switching are important.

The STD10N60M2 is a versatile and high-performance MOSFET that can be used in a wide range of power electronic applications, offering high efficiency, fast switching, and robust performance.

FAQ

What package or case is STD10N60M2 available in?
STD10N60M2 is available in the DPAK package / case.
What voltage specification is listed for STD10N60M2?
Does STD10N60M2 have quantity-based pricing?
What is the mounting type of STD10N60M2?
Is STD10N60M2 currently in stock?
Availability (In Stock : 2498 )
Quantity Unit Price Ext. Price
1+ $0.56840 $0.57
2500+ $0.54540 $1363.50
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