STMicroelectronics_STP76NF75

STMicroelectronics
STP76NF75  
Single FETs, MOSFETs

STMicroelectronics
STP76NF75
278-STP76NF75
Ersa
STMicroelectronics-STP76NF75-datasheets-5803052.pdf
MOSFET N-CH 75V 80A TO220
In Stock : 980

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STP76NF75 Description

STP76NF75 Description

The STP76NF75 is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 75V and a continuous drain current (Id) of 80A at 25°C, this device is well-suited for power electronics and motor control applications. The STP76NF75 features a low on-resistance (Rds On) of 11mOhm at 40A and 10V, ensuring minimal power dissipation and high efficiency.

STP76NF75 Features

  • Technology: MOSFET (Metal Oxide), offering high input impedance and low noise characteristics.
  • Gate Charge (Qg): 160 nC @ 10V, reducing switching losses and improving efficiency.
  • Input Capacitance (Ciss): 3700 pF @ 25V, minimizing parasitic effects and ensuring fast switching.
  • Vgs (Max): ±20V, providing flexibility in gate drive voltage requirements.
  • Rds On (Max): 11mOhm @ 40A, 10V, ensuring low conduction losses.
  • Vgs(th) (Max): 4V @ 250µA, enabling efficient gate drive and low power consumption.
  • Series: STripFET™ II, known for its superior performance and reliability.
  • Mounting Type: Through Hole, facilitating easy integration into existing designs.
  • Package: Tube, providing protection and ease of handling during manufacturing.

STP76NF75 Applications

The STP76NF75 is ideal for a wide range of applications, including:

  1. Power Electronics: Due to its high voltage and current ratings, it is suitable for power supply designs, such as SMPS and DC-DC converters.
  2. Motor Control: Its low on-resistance and high current capability make it an excellent choice for electric motor drives and control systems.
  3. Industrial Automation: The device's robustness and efficiency make it suitable for industrial control systems and automation equipment.
  4. Automotive Applications: The STP76NF75 can be used in various automotive applications, such as electric power steering and battery management systems.

Conclusion of STP76NF75

The STP76NF75 from STMicroelectronics is a powerful and efficient N-channel MOSFET, designed to meet the demanding requirements of modern power electronics and motor control applications. Its unique features, such as low on-resistance, high voltage and current ratings, and superior switching performance, make it a standout choice in its class. With its robust design and wide range of applications, the STP76NF75 is an excellent solution for engineers looking to optimize power efficiency and performance in their designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Qualification
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STP76NF75 Documents

Download datasheets and manufacturer documentation for STP76NF75

Ersa Mult Dev Assembly Site Chg 14/Feb/2020      
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Ersa Box Label Chg 28/Jul/2016      
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