STMicroelectronics_STU6N60M2
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STMicroelectronics
STU6N60M2

278-STU6N60M2
PDF Datasheet
600V 4.5A N-CH MOSFET, 1.2R Rds On, IPAK
16 Weeks

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Tech Specifications

Package/Case
TO-251-3
Continuous Drain Current (ID)
4.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
600V
Fall Time
22.5ns
Gate to Source Voltage (Vgs)
25V
Height
6.2mm
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STU6N60M2 Description

N-Channel 600 V 4.5A (Tc) 60W (Tc) Through Hole TO-251 (IPAK)

FAQ

What voltage specification is listed for STU6N60M2?
The listed voltage-related specification for STU6N60M2 is 650V.
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