STMicroelectronics_STL7LN80K5

STMicroelectronics
STL7LN80K5  
Single FETs, MOSFETs

STMicroelectronics
STL7LN80K5
278-STL7LN80K5
Ersa
STMicroelectronics-STL7LN80K5-datasheets-2144246.pdf
MOSFET N-CH 800V 5A POWERFLAT
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STL7LN80K5 Description

STL7LN80K5 Description

The STL7LN80K5 from STMicroelectronics is an N-channel 800V MOSFET designed for high-efficiency power switching applications. Part of the MDmesh™ series, it leverages advanced Metal Oxide Semiconductor (MOSFET) technology to deliver superior performance in high-voltage environments. With a continuous drain current (Id) of 5A at 25°C and a low on-resistance (Rds(on)) of 1.15Ω at 10V gate drive, this device minimizes conduction losses, making it ideal for energy-conscious designs. Packaged in a compact PowerFlat™ (5x6) surface-mount format, it is optimized for space-constrained applications while ensuring robust thermal dissipation (42W max power dissipation at Tc).

STL7LN80K5 Features

  • High Voltage Rating: 800V Vdss ensures reliability in demanding power circuits.
  • Low Gate Charge (Qg): 12nC at 10V reduces switching losses, enhancing efficiency in high-frequency applications.
  • Optimized Rds(on): 1.15Ω at 2.5A, 10V for reduced conduction losses.
  • Wide Gate-Source Voltage Range: ±30V Vgs(max) offers flexibility in drive circuitry.
  • Robust Packaging: PowerFlat™ 5x6 provides superior thermal performance and space savings.
  • Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL 1 (Unlimited) ensure environmental and regulatory compatibility.

STL7LN80K5 Applications

The STL7LN80K5 excels in:

  • Switch-Mode Power Supplies (SMPS): High-voltage input stages (e.g., PFC circuits).
  • Industrial Power Systems: Motor drives, inverters, and UPS systems.
  • Lighting: LED drivers and ballast control.
  • Renewable Energy: Solar inverters and DC-DC converters.
    Its low Qg and high voltage tolerance make it particularly suited for high-efficiency, high-frequency designs, while the PowerFlat™ package enables compact layouts in PCB designs.

Conclusion of STL7LN80K5

The STL7LN80K5 combines high-voltage capability, low losses, and compact packaging, making it a standout choice for modern power electronics. Its MDmesh™ technology ensures superior switching performance, while STMicroelectronics' reliability guarantees long-term durability. Whether for industrial, automotive, or renewable energy applications, this MOSFET delivers efficiency, space savings, and compliance—key attributes for next-generation power designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Typical Gate Charge @ 10V (nC)
Series
Part Status
Maximum Gate Threshold Voltage (V)
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STL7LN80K5 Documents

Download datasheets and manufacturer documentation for STL7LN80K5

Ersa Spice Model Tutorial for Power MOSFETS       STL7LN80K5 Datasheet      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STL7LN80K5 PSpice Model      
Ersa Spice Model Tutorial for Power MOSFETS       STL7LN80K5 Datasheet      

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