STMicroelectronics_STD70N10F4

STMicroelectronics
STD70N10F4  
Single FETs, MOSFETs

STMicroelectronics
STD70N10F4
278-STD70N10F4
Ersa
STMicroelectronics-STD70N10F4-datasheets-8816713.pdf
MOSFET N-CH 100V 60A DPAK
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    ISO45001
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    STD70N10F4 Description

    STMicroelectronics' STD70N10F4 is a high-power, high-voltage N-channel MOSFET transistor. It is designed to handle high power applications and is suitable for use in a wide range of electronic devices.

    Description:

    The STD70N10F4 is an N-channel MOSFET transistor with a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 70A. It has a low on-state resistance (Rds(on)) of 0.035 Ohms, which allows for efficient power handling and minimal power loss. The transistor also has a fast switching speed, making it ideal for use in high-frequency applications.

    Features:

    • High power handling: The STD70N10F4 is designed to handle high power applications, with a maximum drain-source voltage of 100V and a continuous drain current of 70A.
    • Low on-state resistance: The low on-state resistance of 0.035 Ohms allows for efficient power handling and minimal power loss.
    • Fast switching speed: The fast switching speed of the STD70N10F4 makes it ideal for use in high-frequency applications.
    • High temperature operation: The transistor can operate at high temperatures, making it suitable for use in harsh environments.

    Applications:

    The STD70N10F4 is suitable for use in a wide range of electronic devices, including:

    • Power supplies
    • Motor control circuits
    • High-power switching applications
    • Automotive electronics
    • Industrial control systems

    Overall, the STD70N10F4 is a high-performance MOSFET transistor that is well-suited for use in high-power applications. Its low on-state resistance and fast switching speed make it an ideal choice for a variety of electronic devices.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Package Height
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Series
    Operating Junction Temperature (°C)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STD70N10F4 Documents

    Download datasheets and manufacturer documentation for STD70N10F4

    Ersa Mult Devices 27/Feb/2019      
    Ersa STx70N10F4      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
    Ersa STD70N10F4 View All Specifications      
    Ersa STx70N10F4      

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