The STB60NF10T4 from STMicroelectronics is an N-channel 100V, 80A power MOSFET housed in a D2PAK (TO-263) package, designed for high-efficiency power switching applications. Part of the STripFET™ II series, this MOSFET leverages advanced Metal Oxide Semiconductor (MOS) technology to deliver low on-resistance (23mΩ @ 10V, 40A) and high power dissipation (300W @ Tc). Although marked as Obsolete, it remains a robust choice for legacy designs requiring high current handling and thermal performance. The device features a gate charge (Qg) of 104nC @ 10V and an input capacitance (Ciss) of 4270pF @ 25V, ensuring fast switching speeds in demanding circuits.
The STB60NF10T4 excels in high-current, high-voltage applications where low Rds(On) and thermal stability are critical. While obsolete, its STripFET™ II technology ensures superior performance in legacy designs. Engineers can leverage its fast switching, high power handling, and robust construction for demanding industrial, automotive, and energy systems. For modern replacements, consult STMicroelectronics' updated offerings, but this MOSFET remains a reliable choice for specific high-power needs.
Download datasheets and manufacturer documentation for STB60NF10T4