STMicroelectronics_STB10N95K5

STMicroelectronics
STB10N95K5  
Single FETs, MOSFETs

STMicroelectronics
STB10N95K5
278-STB10N95K5
Ersa
STMicroelectronics-STB10N95K5-datasheets-4025113.pdf
MOSFET N-CH 950V 8A D2PAK
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    STB10N95K5 Description

    STMicroelectronics' STB10N95K5 is a high-power, high-voltage N-channel MOSFET designed for use in a variety of applications, including motor control, power supplies, and power conversion systems.

    Description:

    The STB10N95K5 is an N-channel MOSFET with a drain-source voltage (Vds) of 950V and a continuous drain current (Id) of 110A. It features a low on-state resistance (Rds(on)) of 5.5mΩ, which helps to minimize power loss and improve efficiency in power conversion applications. The device also has a fast switching speed, which makes it suitable for use in high-frequency applications.

    Features:

    • High drain-source voltage (Vds) of 950V
    • Continuous drain current (Id) of 110A
    • Low on-state resistance (Rds(on)) of 5.5mΩ
    • Fast switching speed
    • High input impedance
    • Low gate charge
    • Avalanche energy withstand capability
    • Built-in body diode

    Applications:

    The STB10N95K5 is suitable for use in a wide range of applications, including:

    1. Motor control: The device's high voltage and current ratings make it well-suited for use in motor control applications, such as in industrial machinery and electric vehicles.
    2. Power supplies: The STB10N95K5 can be used in power supply applications, such as in power adapters and chargers, where high voltage and current are required.
    3. Power conversion systems: The device's fast switching speed and low on-state resistance make it suitable for use in power conversion systems, such as in renewable energy applications and power inverters.
    4. Battery protection: The STB10N95K5 can be used in battery protection circuits to prevent overcharging and over-discharging of batteries.
    5. Industrial control: The device's high voltage and current ratings make it suitable for use in industrial control applications, such as in robotics and automation systems.

    Overall, the STB10N95K5 is a versatile and high-performance MOSFET that can be used in a variety of high-power applications. Its combination of high voltage, high current, and fast switching speed make it an excellent choice for power conversion and motor control applications.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STB10N95K5 Documents

    Download datasheets and manufacturer documentation for STB10N95K5

    Ersa Product Change Notification 2024-03-05 (PDF)       Product / Process Change Notification (PDF)       Product Change Notification (PDF)      

    Shopping Guide

    Payment Methods
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    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
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