STMicroelectronics_STI150N10F7

STMicroelectronics
STI150N10F7  
Single FETs, MOSFETs

STMicroelectronics
STI150N10F7
278-STI150N10F7
Ersa
STMicroelectronics-STI150N10F7-datasheets-6517167.pdf
MOSFET N-CH 100V 110A I2PAK
In Stock : 596

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STI150N10F7 Description

STI150N10F7 Description

The STI150N10F7 from STMicroelectronics is an N-channel 100V, 110A power MOSFET housed in an I2PAK (TO-262) through-hole package. Designed for high-efficiency power switching, it features STripFET™ technology, delivering low on-resistance (4.2mΩ @ 55A, 10V) and high current-handling capability. With a 250W (Tc) power dissipation rating, it excels in demanding thermal environments. Though marked Obsolete, it remains a robust choice for legacy designs requiring high reliability. The device is ROHS3 compliant and REACH unaffected, ensuring environmental compliance.

STI150N10F7 Features

  • Low Rds(On): 4.2mΩ minimizes conduction losses, enhancing efficiency.
  • High Current Rating: 110A (Tc) continuous drain current for heavy-load applications.
  • Fast Switching: Gate charge (Qg) of 117nC @ 10V ensures quick transitions, reducing switching losses.
  • Robust Voltage Handling: ±20V Vgs(max) and 100V Vdss provide wide operational margins.
  • Thermal Performance: 250W (Tc) dissipation with TO-262 package for effective heat management.
  • STripFET™ Technology: Optimized for low conduction and switching losses, outperforming standard MOSFETs.

STI150N10F7 Applications

  • Power Supplies: High-efficiency DC-DC converters and SMPS designs.
  • Motor Control: Ideal for H-bridge motor drivers in industrial and automotive systems.
  • Inverters: Suitable for solar inverters and UPS systems due to low Rds(on).
  • Automotive: Used in 12V/24V battery management and load switches.
  • Industrial Switching: High-current relays and power distribution modules.

Conclusion of STI150N10F7

The STI150N10F7 is a high-performance MOSFET tailored for high-current, low-loss switching applications. Its STripFET™ design, combined with low Rds(on) and high thermal endurance, makes it a reliable choice for power electronics. While obsolete, its specifications ensure continued suitability for legacy systems requiring durability and efficiency. Engineers should consider alternatives for new designs but can leverage this MOSFET’s strengths in existing high-power circuits.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Typical Input Capacitance @ Vds (pF)
Category
Configuration
PCB changed
Typical Turn-Off Delay Time (ns)
HTS
Maximum Gate Source Leakage Current (nA)
Number of Elements per Chip
ECCN (US)
Typical Rise Time (ns)
PPAP
Maximum Power Dissipation (mW)
Channel Mode
Typical Turn-On Delay Time (ns)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Maximum IDSS (uA)
Typical Fall Time (ns)
Process Technology
Package Height
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Maximum Gate Source Voltage (V)
Maximum Drain Source Voltage (V)
SVHC Exceeds Threshold
Maximum Drain Source Resistance (mOhm)
Package Length
Supplier Temperature Grade
Typical Gate Charge @ 10V (nC)
Standard Package Name
Pin Count
Mounting
Tab
Lead Shape
Part Status
SVHC
Maximum Gate Threshold Voltage (V)
Package Width
Typical Gate Charge @ Vgs (nC)

STI150N10F7 Documents

Download datasheets and manufacturer documentation for STI150N10F7

Ersa STx150N10F7      
Ersa STI150N10F7 obs 9/Nov/2022      
Ersa STx150N10F7      

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