The STI150N10F7 from STMicroelectronics is an N-channel 100V, 110A power MOSFET housed in an I2PAK (TO-262) through-hole package. Designed for high-efficiency power switching, it features STripFET™ technology, delivering low on-resistance (4.2mΩ @ 55A, 10V) and high current-handling capability. With a 250W (Tc) power dissipation rating, it excels in demanding thermal environments. Though marked Obsolete, it remains a robust choice for legacy designs requiring high reliability. The device is ROHS3 compliant and REACH unaffected, ensuring environmental compliance.
The STI150N10F7 is a high-performance MOSFET tailored for high-current, low-loss switching applications. Its STripFET™ design, combined with low Rds(on) and high thermal endurance, makes it a reliable choice for power electronics. While obsolete, its specifications ensure continued suitability for legacy systems requiring durability and efficiency. Engineers should consider alternatives for new designs but can leverage this MOSFET’s strengths in existing high-power circuits.
Download datasheets and manufacturer documentation for STI150N10F7