STMicroelectronics
STW18NM80
Single FETs, MOSFETs
STW18NM80
278-STW18NM80
STMicroelectronics-STW18NM80-datasheets-10512628.pdf
MOSFET N-CH 800V 17A TO247-3
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STW18NM80 Description
STW18NM80 Description
The STW18NM80 is a high-performance MOSFET (Metal Oxide) developed by STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 17A at 25°C, this N-channel device offers robust performance in demanding power electronics applications.
STW18NM80 Features
- High Voltage and Current Handling: The STW18NM80 can handle a drain-to-source voltage of up to 800V and a continuous drain current of 17A at 25°C, making it suitable for high-power applications.
- Low On-State Resistance: With a maximum Rds(on) of 295mOhm at 8.5A and 10V, the STW18NM80 offers low conduction losses, improving efficiency in power conversion applications.
- Fast Switching Speed: The device has a maximum gate threshold voltage (Vgs(th)) of 5V at 250µA, enabling fast switching and reducing switching losses.
- Robust Gate Charge Handling: The STW18NM80 can handle a maximum gate charge (Qg) of 70nC at 10V, ensuring reliable operation in high-speed switching applications.
- Wide Operating Temperature Range: The device operates over a junction temperature range of -55°C to 150°C, making it suitable for a wide range of environments.
- Compliance with Industry Standards: The STW18NM80 is compliant with the RoHS3 directive and REACH regulations, ensuring environmental and health safety.
STW18NM80 Applications
The STW18NM80 is ideal for a variety of high-power applications, including:
- Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, particularly in industrial and automotive applications.
- Motor Control: The STW18NM80's robust performance characteristics make it well-suited for motor control applications, where high voltage and current handling are required.
- Renewable Energy Systems: The device's ability to handle high voltage and current makes it an excellent choice for solar inverters and other renewable energy systems.
- Industrial Automation: The STW18NM80's performance benefits can be leveraged in industrial automation systems, where high power and reliability are critical.
Conclusion of STW18NM80
The STW18NM80 from STMicroelectronics is a high-performance MOSFET designed for demanding power electronics applications. Its combination of high voltage and current handling, low on-state resistance, and fast switching capabilities make it an excellent choice for power supplies, motor control, renewable energy systems, and industrial automation. With its compliance with industry standards and robust performance characteristics, the STW18NM80 is a reliable solution for high-power applications.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STW18NM80 Documents
Download datasheets and manufacturer documentation for STW18NM80
STx18NM80 Standard outer labelling 15/Nov/2023 STW18NM80 View All Specifications STx18NM80 Related Parts
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