STMicroelectronics_STD3NK80ZT4

STMicroelectronics
STD3NK80ZT4  
Single FETs, MOSFETs

STMicroelectronics
STD3NK80ZT4
278-STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
In Stock : 1638

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    STD3NK80ZT4 Description

    The STD3NK80ZT4 is a high voltage N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and automotive systems.

    Description:

    The STD3NK80ZT4 is a surface-mount device that features a TO-220F package. It has a maximum drain-source voltage (VDS) of 800V and a continuous drain current (ID) of 7.4A. The device also has a low on-state resistance (RDS(on)) of 0.055 ohms, which helps to minimize power dissipation and improve efficiency.

    Features:

    1. High voltage operation: The STD3NK80ZT4 can handle high voltages up to 800V, making it suitable for use in high voltage applications.
    2. Low on-state resistance: The low RDS(on) of 0.055 ohms helps to minimize power dissipation and improve efficiency in power electronic applications.
    3. Surface-mount package: The TO-220F package is designed for surface-mount applications, which can help to save space and reduce assembly costs.
    4. Logic-level gate drive: The STD3NK80ZT4 can be driven by logic-level signals, making it easy to interface with digital control circuits.
    5. Robust protection features: The device includes built-in protection features such as over-voltage, over-current, and over-temperature protection to help ensure reliable operation.

    Applications:

    The STD3NK80ZT4 is suitable for a wide range of power electronic applications, including:

    1. Motor control: The device can be used in motor control applications, such as brushless DC motor drivers and AC motor controllers.
    2. Power supplies: The high voltage rating and low on-state resistance make the STD3NK80ZT4 suitable for use in power supply applications, such as switched-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
    3. Automotive systems: The device can be used in various automotive applications, such as electric power steering (EPS) systems, battery management systems, and electric vehicle (EV) charging systems.
    4. Industrial control: The STD3NK80ZT4 can be used in industrial control applications, such as servo motor drives, robotic systems, and programmable logic controllers (PLC).
    5. Renewable energy systems: The device can be used in renewable energy applications, such as solar panel inverters and wind turbine power converters.

    In summary, the STD3NK80ZT4 is a high voltage N-channel power MOSFET that offers a combination of high voltage operation, low on-state resistance, and robust protection features. It is suitable for use in a wide range of power electronic applications, including motor control, power supplies, automotive systems, industrial control, and renewable energy systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Typical Reverse Recovery Charge (nC)
    Pin Count
    Mounting
    Minimum Gate Threshold Voltage (V)
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Typical Gate to Drain Charge (nC)
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Typical Gate to Source Charge (nC)
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    RoHS Status
    Typical Gate Threshold Voltage (V)
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Maximum Diode Forward Voltage (V)
    Series
    Operating Junction Temperature (°C)
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STD3NK80ZT4 Documents

    Download datasheets and manufacturer documentation for STD3NK80ZT4

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