The STL4N10F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power dissipation and low on-resistance. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 4.5A at 25°C, this device is ideal for power management and motor control applications. The STL4N10F7 is manufactured using advanced MOSFET technology, ensuring high efficiency and reliability in demanding environments.
STL4N10F7 Features
High Drain-to-Source Voltage (Vdss): 100V, suitable for high-voltage applications.
Continuous Drain Current (Id): 4.5A at 25°C, 18A at Tc, providing high current handling capability.
Low On-Resistance (Rds On): 70mOhm at 2.25A, 10V, reducing power losses and improving efficiency.
Low Gate Threshold Voltage (Vgs(th)): 4.5V at 250µA, enabling easy gate drive and control.
High Input Capacitance (Ciss): 408 pF at 50V, minimizing capacitive losses and improving switching performance.
Low Gate Charge (Qg): 7.8 nC at 10V, reducing switching losses and improving efficiency.
Robust Power Dissipation: 2.9W (Ta), 50W (Tc), suitable for high-power applications.
Surface Mount Technology: PowerFlat™ (3.3x3.3) package,PCB。
Compliance with Industry Standards: REACH Unaffected, ROHS3 Compliant, and Moisture Sensitivity Level (MSL) 1, ensuring environmental and safety compliance.
STL4N10F7 Applications
The STL4N10F7 is ideal for a wide range of high-power applications, including:
Power Management: Voltage regulation, power conversion, and distribution in electronic devices.
Motor Control: High-efficiency motor drivers, particularly in industrial and automotive applications.
Battery Management Systems: Battery charging and protection circuits in portable devices and electric vehicles.
Industrial Automation: High-power switching and control in robotic and automation systems.
Renewable Energy Systems: Power conversion and management in solar and wind energy systems.
Conclusion of STL4N10F7
The STL4N10F7 from STMicroelectronics is a high-performance N-Channel MOSFET, offering a combination of high voltage, low on-resistance, and low gate charge. Its advanced technology, robust power dissipation, and compliance with industry standards make it an ideal choice for demanding high-power applications. With its unique features and advantages, the STL4N10F7 stands out from similar models, providing a reliable and efficient solution for power management and motor control applications.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STL4N10F7 Documents
Download datasheets and manufacturer documentation for STL4N10F7
Product Change Notification (PDF) PRODUCT / PROCESS CHANGE INFORMATION (PDF)
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service