STMicroelectronics_STL4N10F7

STMicroelectronics
STL4N10F7  
Single FETs, MOSFETs

STMicroelectronics
STL4N10F7
278-STL4N10F7
Ersa
STMicroelectronics-STL4N10F7-datasheets-3626129.pdf
MOSFET N-CH 100V 4.5/18A PWRFLAT
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    STL4N10F7 Description

    STL4N10F7 Description

    The STL4N10F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power dissipation and low on-resistance. With a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 4.5A at 25°C, this device is ideal for power management and motor control applications. The STL4N10F7 is manufactured using advanced MOSFET technology, ensuring high efficiency and reliability in demanding environments.

    STL4N10F7 Features

    • High Drain-to-Source Voltage (Vdss): 100V, suitable for high-voltage applications.
    • Continuous Drain Current (Id): 4.5A at 25°C, 18A at Tc, providing high current handling capability.
    • Low On-Resistance (Rds On): 70mOhm at 2.25A, 10V, reducing power losses and improving efficiency.
    • Low Gate Threshold Voltage (Vgs(th)): 4.5V at 250µA, enabling easy gate drive and control.
    • High Input Capacitance (Ciss): 408 pF at 50V, minimizing capacitive losses and improving switching performance.
    • Low Gate Charge (Qg): 7.8 nC at 10V, reducing switching losses and improving efficiency.
    • Robust Power Dissipation: 2.9W (Ta), 50W (Tc), suitable for high-power applications.
    • Surface Mount Technology: PowerFlat™ (3.3x3.3) package,PCB。
    • Compliance with Industry Standards: REACH Unaffected, ROHS3 Compliant, and Moisture Sensitivity Level (MSL) 1, ensuring environmental and safety compliance.

    STL4N10F7 Applications

    The STL4N10F7 is ideal for a wide range of high-power applications, including:

    1. Power Management: Voltage regulation, power conversion, and distribution in electronic devices.
    2. Motor Control: High-efficiency motor drivers, particularly in industrial and automotive applications.
    3. Battery Management Systems: Battery charging and protection circuits in portable devices and electric vehicles.
    4. Industrial Automation: High-power switching and control in robotic and automation systems.
    5. Renewable Energy Systems: Power conversion and management in solar and wind energy systems.

    Conclusion of STL4N10F7

    The STL4N10F7 from STMicroelectronics is a high-performance N-Channel MOSFET, offering a combination of high voltage, low on-resistance, and low gate charge. Its advanced technology, robust power dissipation, and compliance with industry standards make it an ideal choice for demanding high-power applications. With its unique features and advantages, the STL4N10F7 stands out from similar models, providing a reliable and efficient solution for power management and motor control applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STL4N10F7 Documents

    Download datasheets and manufacturer documentation for STL4N10F7

    Ersa Product Change Notification (PDF)       PRODUCT / PROCESS CHANGE INFORMATION (PDF)      

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