STMicroelectronics
STL130N6F7
Single FETs, MOSFETs
STL130N6F7
278-STL130N6F7
STMicroelectronics-STL130N6F7-datasheets-10341667.pdf
MOSFET N-CH 60V 130A POWERFLAT
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STL130N6F7 Description
STMicroelectronics' STL130N6F7 is a high-power, high-efficiency MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in a wide range of applications. Here's a brief description, features, and applications of the STL130N6F7:
Description:
The STL130N6F7 is an N-channel MOSFET with a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 116A. It is designed to operate with a gate-source voltage (VGS) ranging from 10V to 20V. The device is available in a Power-FLAT 5x6 package, which is suitable for high-density applications.
Features:
- High-power, high-efficiency: The STL130N6F7 is designed to handle high power levels with a high level of efficiency, making it suitable for demanding applications.
- Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps reduce power dissipation and improve overall efficiency.
- High input impedance: The MOSFET has a high input impedance, which allows it to be easily driven by a wide range of control circuits.
- Robust design: The STL130N6F7 is built to withstand high voltage transients and high temperature operation, ensuring reliable performance in various applications.
- Avalanche energy capable: The device can handle high-energy avalanche transients, making it suitable for applications with high-energy transients.
Applications:
- Motor control: The high power and efficiency of the STL130N6F7 make it suitable for use in motor control applications, such as in industrial automation, robotics, and automotive systems.
- Power supplies: The MOSFET can be used in power supply applications, including switching power supplies and battery chargers, due to its high efficiency and ability to handle high power levels.
- Inverters: The STL130N6F7 can be used in inverter applications, such as solar panel inverters and uninterruptible power supply (UPS) systems, where high efficiency and robustness are required.
- Automotive applications: The device's high power handling capability and robust design make it suitable for use in various automotive applications, such as electric vehicle (EV) charging systems and power electronics.
- Industrial control: The STL130N6F7 can be used in industrial control applications, such as in HVAC systems, conveyor systems, and other motor control applications.
In summary, the STL130N6F7 is a high-power, high-efficiency MOSFET from STMicroelectronics that offers a range of features, including low on-state resistance, high input impedance, and robust design. It is suitable for use in various applications, such as motor control, power supplies, inverters, automotive systems, and industrial control.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STL130N6F7 Documents
Download datasheets and manufacturer documentation for STL130N6F7
STLxx 27/Nov/2023 STL130N6F7 STL130N6F7 Related Parts
Shopping Guide
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