STMicroelectronics_STP4NK80Z

STMicroelectronics
STP4NK80Z  
Single FETs, MOSFETs

STMicroelectronics
STP4NK80Z
278-STP4NK80Z
Ersa
STMicroelectronics-STP4NK80Z-datasheets-4418714.pdf
MOSFET N-CH 800V 3A TO220AB
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    STP4NK80Z Description

    STP4NK80Z Description

    The STP4NK80Z is a high-performance MOSFET (Metal Oxide) device from STMicroelectronics, designed for applications requiring high voltage and power handling capabilities. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 3A at 25°C, this device is well-suited for demanding power electronics applications. The SuperMESH™ series of MOSFETs offers improved performance and reliability compared to traditional MOSFETs, making the STP4NK80Z an ideal choice for engineers looking to optimize their designs.

    STP4NK80Z Features

    • High Voltage and Current Handling: The STP4NK80Z can handle drain-to-source voltages up to 800V and continuous drain currents up to 3A at 25°C, making it suitable for high-power applications.
    • Low On-Resistance: With a maximum Rds(on) of 3.5Ω at 1.5A and 10V, the STP4NK80Z offers low conduction losses, improving efficiency in power conversion circuits.
    • SuperMESH™ Technology: This advanced technology provides improved switching performance, reduced gate charge, and enhanced thermal stability compared to traditional MOSFETs.
    • Robustness and Reliability: The STP4NK80Z features a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering, and is compliant with RoHS3 regulations, ensuring environmental friendliness.
    • Package and Mounting: The device is available in a through-hole TO220AB package, making it suitable for a wide range of applications where high thermal dissipation is required.

    STP4NK80Z Applications

    The STP4NK80Z is ideal for various high-voltage and high-power applications, including:

    • Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, such as switching power supplies and battery chargers.
    • Industrial Control: The device's robustness and reliability make it well-suited for industrial control applications, where high voltage and power handling are required.
    • Renewable Energy: The STP4NK80Z can be used in solar inverters and wind power converters, where high voltage and power handling capabilities are essential.
    • Automotive Applications: The device's high voltage and current ratings make it suitable for use in electric vehicle (EV) charging systems and other high-voltage automotive applications.

    Conclusion of STP4NK80Z

    The STP4NK80Z from STMicroelectronics is a high-performance MOSFET designed for demanding high-voltage and high-power applications. Its SuperMESH™ technology, low on-resistance, and high robustness make it an ideal choice for engineers looking to optimize their designs in power electronics, industrial control, renewable energy, and automotive applications. With its RoHS3 compliance and unlimited storage time before reflow soldering, the STP4NK80Z offers a reliable and environmentally friendly solution for high-power electronics.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP4NK80Z Documents

    Download datasheets and manufacturer documentation for STP4NK80Z

    Ersa ST(D,P)4NK80Z(-1,FP)      
    Ersa STB6NK90Z View All Specifications      
    Ersa ST(D,P)4NK80Z(-1,FP)      

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