STMicroelectronics_STP4NK80Z
original

STMicroelectronics
STP4NK80Z

278-STP4NK80Z
PDF Datasheet
800V 3A N-CH MOSFET TO-220 3.5R RdsOn
13 Weeks

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Tech Specifications

Package/Case
TO-220
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
3.5R
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
3.5R
Fall Time
32ns
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STP4NK80Z Description

STP4NK80Z Description

The STP4NK80Z is a high-performance MOSFET (Metal Oxide) device from STMicroelectronics, designed for applications requiring high voltage and power handling capabilities. With a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 3A at 25°C, this device is well-suited for demanding power electronics applications. The SuperMESH™ series of MOSFETs offers improved performance and reliability compared to traditional MOSFETs, making the STP4NK80Z an ideal choice for engineers looking to optimize their designs.

STP4NK80Z Features

  • High Voltage and Current Handling: The STP4NK80Z can handle drain-to-source voltages up to 800V and continuous drain currents up to 3A at 25°C, making it suitable for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 3.5Ω at 1.5A and 10V, the STP4NK80Z offers low conduction losses, improving efficiency in power conversion circuits.
  • SuperMESH™ Technology: This advanced technology provides improved switching performance, reduced gate charge, and enhanced thermal stability compared to traditional MOSFETs.
  • Robustness and Reliability: The STP4NK80Z features a moisture sensitivity level (MSL) of 1, indicating unlimited storage time before reflow soldering, and is compliant with RoHS3 regulations, ensuring environmental friendliness.
  • Package and Mounting: The device is available in a through-hole TO220AB package, making it suitable for a wide range of applications where high thermal dissipation is required.

STP4NK80Z Applications

The STP4NK80Z is ideal for various high-voltage and high-power applications, including:

  • Power Supplies: The high voltage and current ratings make it suitable for use in power supply designs, such as switching power supplies and battery chargers.
  • Industrial Control: The device's robustness and reliability make it well-suited for industrial control applications, where high voltage and power handling are required.
  • Renewable Energy: The STP4NK80Z can be used in solar inverters and wind power converters, where high voltage and power handling capabilities are essential.
  • Automotive Applications: The device's high voltage and current ratings make it suitable for use in electric vehicle (EV) charging systems and other high-voltage automotive applications.

Conclusion of STP4NK80Z

The STP4NK80Z from STMicroelectronics is a high-performance MOSFET designed for demanding high-voltage and high-power applications. Its SuperMESH™ technology, low on-resistance, and high robustness make it an ideal choice for engineers looking to optimize their designs in power electronics, industrial control, renewable energy, and automotive applications. With its RoHS3 compliance and unlimited storage time before reflow soldering, the STP4NK80Z offers a reliable and environmentally friendly solution for high-power electronics.

FAQ

What is STP4NK80Z?
STP4NK80Z is a Single FETs, MOSFETs from STMicroelectronics. This product page provides its main specifications, pricing information, availability, and inquiry options.
What package or case is STP4NK80Z available in?
Does STP4NK80Z have quantity-based pricing?
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Is STP4NK80Z currently in stock?
Availability (In Stock : 1062 )
Quantity Unit Price Ext. Price
1+ $1.56343 $1.56
10+ $1.35257 $13.53
50+ $1.23772 $61.89
100+ $1.10743 $110.74
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