STMicroelectronics_STF18N65M2

STMicroelectronics
STF18N65M2  
Single FETs, MOSFETs

STMicroelectronics
STF18N65M2
278-STF18N65M2
Ersa
STMicroelectronics-STF18N65M2-datasheets-12409923.pdf
MOSFET N-CH 650V 12A TO220FP
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    STF18N65M2 Description

    STF18N65M2 Description

    The STF18N65M2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage rating of 650V and a continuous drain current of 12A at 25°C, this MOSFET is well-suited for demanding power electronics applications.

    STF18N65M2 Features

    • Robust Voltage and Current Ratings: The STF18N65M2 boasts a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 12A at 25°C, making it ideal for high-power applications.
    • Low On-Resistance: The maximum on-resistance (Rds On) of 330mOhm at 6A and 10V ensures efficient power dissipation and minimal power loss.
    • High Input Capacitance: With a maximum input capacitance (Ciss) of 770pF at 100V, the STF18N65M2 provides fast switching capabilities.
    • Low Gate Charge: The maximum gate charge (Qg) of 20nC at 10V contributes to reduced switching losses and improved efficiency.
    • Compliance and Environmental Standards: The STF18N65M2 is compliant with REACH and RoHS3 standards, making it suitable for environmentally conscious applications.
    • Mounting Type: The through-hole mounting type allows for easy integration into existing designs.

    STF18N65M2 Applications

    The STF18N65M2 is an excellent choice for a variety of power electronics applications, including:

    • Power Supplies: Its high voltage and current ratings make it suitable for use in power supply designs, where efficient power conversion is critical.
    • Motor Controls: The STF18N65M2's low on-resistance and fast switching capabilities are ideal for motor control applications, where precise control and high efficiency are required.
    • Industrial Automation: In industrial automation systems, the STF18N65M2 can be used for controlling high-power motors and other actuators, providing reliable performance in demanding environments.

    Conclusion of STF18N65M2

    The STF18N65M2 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its compliance with environmental standards and ease of integration make it an ideal choice for a wide range of power electronics applications, from power supplies to motor controls and industrial automation. With its unique features and advantages over similar models, the STF18N65M2 is a reliable and high-performance solution for demanding power electronics applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STF18N65M2 Documents

    Download datasheets and manufacturer documentation for STF18N65M2

    Ersa Mult Dev Wafer Site Add 3/Aug/2018      
    Ersa STF18N65M2      
    Ersa STF18N65M2      

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