STMicroelectronics_STD16N65M5

STMicroelectronics
STD16N65M5  
Single FETs, MOSFETs

STMicroelectronics
STD16N65M5
278-STD16N65M5
Ersa
STMicroelectronics-STD16N65M5-datasheets-3512735.pdf
MOSFET N-CH 650V 12A DPAK
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    STD16N65M5 Description

    STMicroelectronics' STD16N65M5 is a high-voltage, high-power IGBT (Insulated Gate Bipolar Transistor) module designed for use in various industrial and power electronics applications. Here's a brief description, features, and applications of the STD16N65M5:

    Description:

    The STD16N65M5 is a three-phase IGBT module that consists of six IGBTs and six diodes, arranged in a half-bridge configuration. It is designed to handle high voltages and currents, making it suitable for a wide range of power electronics applications.

    Features:

    1. High Voltage and Current Ratings: The STD16N65M5 can handle a maximum collector-emitter voltage (VCE) of 650V and a continuous collector current (IC) of 160A per IGBT chip.
    2. High Power Density: The module's compact design allows for efficient heat dissipation and high power density, making it suitable for space-constrained applications.
    3. Integrated Phase Management: The module features integrated phase management, which simplifies the control and protection of the IGBTs.
    4. Short-Circuit Capability: The STD16N65M5 has a short-circuit withstand time of up to 5 microseconds, providing robust protection against short-circuit conditions.
    5. High Temperature Operation: The module is designed to operate in a wide temperature range of -40°C to 175°C, making it suitable for harsh environments.
    6. Advanced Packaging: The module features a robust and reliable packaging, with a press-fit copper base for efficient heat dissipation and a high-quality insulation material for electrical isolation.

    Applications:

    1. Industrial Drives: The STD16N65M5 can be used in variable frequency drives (VFDs) for controlling the speed and torque of motors in various industrial applications.
    2. Renewable Energy: The module is suitable for use in solar inverters, wind turbine converters, and energy storage systems, where high efficiency and reliability are crucial.
    3. Electric Vehicles (EVs): The STD16N65M5 can be used in the powertrain systems of electric vehicles, such as traction inverters and onboard chargers.
    4. Power Supplies: The module can be used in high-power switching mode power supplies (SMPS) and uninterruptible power supplies (UPS) systems.
    5. Motor Control: The STD16N65M5 can be used in motor control applications, such as HVAC systems, pumps, and fans, where precise control of motor speed and torque is required.
    6. Rail Transportation: The module can be used in traction and auxiliary converters for rail vehicles, such as locomotives and trams.

    In summary, the STMicroelectronics' STD16N65M5 is a high-voltage, high-power IGBT module that offers a combination of high performance, reliability, and versatility, making it suitable for a wide range of industrial and power electronics applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Material
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Tab
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD16N65M5 Documents

    Download datasheets and manufacturer documentation for STD16N65M5

    Ersa Product / Process Change Notification (PDF)       Product Change Notification (PDF)      

    Shopping Guide

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