STMicroelectronics
STW48NM60N
Single FETs, MOSFETs
STW48NM60N
278-STW48NM60N
STMicroelectronics-STW48NM60N-datasheets-7625750.pdf
MOSFET N-CH 600V 44A TO247
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STW48NM60N Description
STW48NM60N is a high-power, high-voltage MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and renewable energy systems.
Description:
The STW48NM60N is a N-channel MOSFET with a voltage rating of 600V and a continuous drain current of 48A. It is packaged in a TO-220AB plastic package, which is suitable for use in high-power applications.
Features:
- High voltage rating: The STW48NM60N has a high voltage rating of 600V, making it suitable for use in high-voltage applications.
- High current capability: The device can handle a continuous drain current of 48A, making it suitable for high-current applications.
- Low on-state resistance: The on-state resistance (RDS(on)) of the STW48NM60N is low, which helps to minimize power losses and improve efficiency.
- High switching speed: The device has a fast switching speed, which helps to minimize switching losses and improve overall system performance.
- Robust protection features: The STW48NM60N includes built-in protection features such as over-temperature protection and over-current protection to help ensure reliable operation.
Applications:
- Motor control: The STW48NM60N is commonly used in motor control applications, such as in industrial machinery, robotics, and automotive systems.
- Power supplies: The device is also used in power supply applications, such as in switching power supplies and battery chargers.
- Renewable energy systems: The STW48NM60N is suitable for use in renewable energy systems, such as solar panel inverters and wind turbine converters.
- Lighting systems: The device is also used in lighting systems, such as in LED drivers and fluorescent lamp ballasts.
Overall, the STW48NM60N is a high-performance MOSFET that offers a combination of high voltage, high current, and fast switching capabilities, making it suitable for a wide range of power electronic applications.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STW48NM60N Documents
Download datasheets and manufacturer documentation for STW48NM60N
IPG/14/8475 16/May/2014 STW48NM60N Standard outer labelling 15/Nov/2023 STW48NM60N View All Specifications STW48NM60N Related Parts
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