The STD12N65M5 from STMicroelectronics is an N-channel 650V, 8.5A power MOSFET housed in a DPAK (TO-252) surface-mount package. Part of the MDmesh™ V series, this device leverages advanced Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology to deliver high efficiency and robust performance in power conversion applications. With a low on-resistance (Rds(on)) of 430mΩ @ 4.3A, 10V, it minimizes conduction losses, making it ideal for high-voltage switching. Although marked as Obsolete, its specifications remain competitive for legacy designs requiring high-voltage handling and thermal stability up to 150°C (TJ).
The STD12N65M5 excels in high-voltage, medium-current applications with its low Rds(on), fast switching, and thermal resilience. While obsolete, its MDmesh™ V technology ensures lower conduction losses compared to standard MOSFETs, making it a viable choice for specific industrial and power electronics designs. Engineers should evaluate alternative modern equivalents for new projects but may consider this device for backward compatibility or cost-sensitive legacy systems.
Download datasheets and manufacturer documentation for STD12N65M5