STMicroelectronics_STD12N65M5

STMicroelectronics
STD12N65M5  
Single FETs, MOSFETs

STMicroelectronics
STD12N65M5
278-STD12N65M5
Ersa
STMicroelectronics-STD12N65M5-datasheets-7071981.pdf
MOSFET N-CH 650V 8.5A DPAK
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STD12N65M5 Description

STD12N65M5 Description

The STD12N65M5 from STMicroelectronics is an N-channel 650V, 8.5A power MOSFET housed in a DPAK (TO-252) surface-mount package. Part of the MDmesh™ V series, this device leverages advanced Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) technology to deliver high efficiency and robust performance in power conversion applications. With a low on-resistance (Rds(on)) of 430mΩ @ 4.3A, 10V, it minimizes conduction losses, making it ideal for high-voltage switching. Although marked as Obsolete, its specifications remain competitive for legacy designs requiring high-voltage handling and thermal stability up to 150°C (TJ).

STD12N65M5 Features

  • High Voltage Rating: 650V Vdss ensures reliability in demanding power circuits.
  • Low Gate Charge (Qg): 22nC @ 10V reduces switching losses, enhancing efficiency in high-frequency applications.
  • Optimized Switching Performance: Input capacitance (Ciss) of 900pF @ 100V balances speed and noise immunity.
  • Thermal Robustness: 70W (Tc) power dissipation capability with a wide ±25V Vgs range for flexible drive requirements.
  • Compliance: ROHS3 and REACH Unaffected, meeting environmental standards.
  • Surface-Mount Design: DPAK package (Tape & Reel) facilitates automated assembly.

STD12N65M5 Applications

  • Switch-Mode Power Supplies (SMPS): High-voltage DC-DC converters, PFC stages.
  • Industrial Systems: Motor drives, inverters, and UPS solutions.
  • Lighting: LED drivers and ballast control circuits.
  • Renewable Energy: Solar inverters and wind power systems requiring efficient high-voltage switching.
  • Legacy Designs: Suitable for maintaining or servicing older equipment where modern replacements may not be pin-compatible.

Conclusion of STD12N65M5

The STD12N65M5 excels in high-voltage, medium-current applications with its low Rds(on), fast switching, and thermal resilience. While obsolete, its MDmesh™ V technology ensures lower conduction losses compared to standard MOSFETs, making it a viable choice for specific industrial and power electronics designs. Engineers should evaluate alternative modern equivalents for new projects but may consider this device for backward compatibility or cost-sensitive legacy systems.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STD12N65M5 Documents

Download datasheets and manufacturer documentation for STD12N65M5

Ersa STx12N65M5      
Ersa STx12N65M5      

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