STMicroelectronics_STL60N10F7

STMicroelectronics
STL60N10F7  
Single FETs, MOSFETs

STMicroelectronics
STL60N10F7
278-STL60N10F7
Ersa
STMicroelectronics-STL60N10F7-datasheets-2274382.pdf
MOSFET N-CH 100V 46A POWERFLAT
In Stock : 29140

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    • 1+
    • $1.30903
    • $1.31
    • 10+
    • $1.00036
    • $10
    • 30+
    • $0.78031
    • $23.41
    • 100+
    • $0.69817
    • $69.82
    • 500+
    • $0.66018
    • $330.09
    • 1000+
    • $0.64375
    • $643.75
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    STL60N10F7 Description

    STL60N10F7 Description

    The STL60N10F7 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high power dissipation and robust performance. With a drain to source voltage (Vdss) of 100V and a continuous drain current (Id) of 46A at 25°C, this device is ideal for demanding power electronics applications. The STL60N10F7 is manufactured using advanced MOSFET technology, ensuring high efficiency and reliability.

    STL60N10F7 Features

    • Input Capacitance (Ciss): The STL60N10F7 boasts an ultra-low input capacitance of 1640 pF @ 50V, enabling fast switching and reducing power losses.
    • Gate Charge (Qg): With a maximum gate charge of 25 nC @ 10V, this MOSFET offers low gate charge for improved efficiency and reduced power consumption.
    • Drain to Source Voltage (Vdss): The device can handle voltages up to 100V, making it suitable for high-voltage applications.
    • Power Dissipation: The STL60N10F7 can dissipate up to 5W at ambient temperature and 72W at case temperature, ensuring reliable operation in high-power applications.
    • Rds On (Max): This MOSFET features a low on-resistance of 18mOhm @ 6A, 10V, minimizing power losses and improving efficiency.
    • Vgs(th) (Max): The threshold voltage of 4.5V @ 250µA ensures reliable operation and easy control of the device.
    • Series: The STL60N10F7 belongs to the DeepGATE™ and STripFET™ VII series, known for their high performance and advanced features.

    STL60N10F7 Applications

    The STL60N10F7 is ideal for a wide range of applications, including:

    • Power Electronics: Due to its high voltage and current ratings, this MOSFET is perfect for power electronics applications such as power supplies, motor drives, and inverters.
    • Automotive: The robust performance and high power dissipation capabilities make the STL60N10F7 suitable for automotive applications like electric vehicle charging systems and power management.
    • Industrial Control: This MOSFET can be used in industrial control systems, such as motor control and power distribution systems, where high power and reliability are crucial.

    Conclusion of STL60N10F7

    The STL60N10F7 from STMicroelectronics is a high-performance N-Channel MOSFET designed for demanding power electronics applications. Its unique features, such as low input capacitance, low gate charge, and high power dissipation, make it an ideal choice for high-voltage and high-current applications. With its advanced technology and robust performance, the STL60N10F7 is a reliable solution for power electronics, automotive, and industrial control applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STL60N10F7 Documents

    Download datasheets and manufacturer documentation for STL60N10F7

    Ersa STL60N10F7      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021      
    Ersa STL60N10F7      
    Ersa Mult Dev Mark Chg 9/Sep/2020      

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