STMicroelectronics_STD5N52K3

STMicroelectronics
STD5N52K3  
Single FETs, MOSFETs

STMicroelectronics
STD5N52K3
278-STD5N52K3
Ersa
STMicroelectronics-STD5N52K3-datasheets-9268712.pdf
MOSFET N-CH 525V 4.4A DPAK
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STD5N52K3 Description

STD5N52K3 Description

The STD5N52K3 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 525V and continuous drain current (Id) of 4.4A at 25°C, this device is well-suited for power electronics applications. The STD5N52K3 features a low on-resistance (Rds On) of 1.5Ω at 2.2A and 10V, ensuring efficient power dissipation and minimizing power losses.

STD5N52K3 Features

  • High Voltage and Current Handling: The STD5N52K3 can handle high voltages up to 525V and continuous currents up to 4.4A, making it ideal for demanding power electronics applications.
  • Low On-Resistance: With an Rds On of just 1.5Ω at 2.2A and 10V, this MOSFET minimizes power losses and ensures efficient power transfer.
  • Robust Gate Charge and Input Capacitance: The STD5N52K3 has a maximum gate charge (Qg) of 17nC at 10V and an input capacitance (Ciss) of 545pF at 100V, ensuring fast switching and reduced gate drive requirements.
  • SuperMESH3™ Series: This MOSFET belongs to the SuperMESH3™ series, known for its excellent performance and reliability in high-power applications.
  • Surface Mount Package: The DPAK package allows for easy surface-mount integration in various electronic systems.

STD5N52K3 Applications

The STD5N52K3 is ideal for a wide range of applications, including:

  1. Power Electronics: Due to its high voltage and current ratings, this MOSFET is well-suited for power electronics applications such as power supplies, motor drives, and inverters.
  2. Automotive Electronics: The STD5N52K3 can be used in automotive applications like electric vehicle charging systems, battery management systems, and power windows.
  3. Industrial Control Systems: This MOSFET is suitable for industrial control systems that require high voltage and current handling capabilities, such as motor controllers and variable frequency drives.

Conclusion of STD5N52K3

The STD5N52K3 is a powerful and reliable N-Channel MOSFET from STMicroelectronics, offering high voltage and current handling capabilities with low on-resistance. Its robust gate charge and input capacitance ensure fast switching and reduced gate drive requirements, making it an excellent choice for demanding power electronics applications. The STD5N52K3's performance benefits and unique features make it ideal for use in power electronics, automotive electronics, and industrial control systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD5N52K3 Documents

Download datasheets and manufacturer documentation for STD5N52K3

Ersa STB,STD,STF,STP,STU5N52K3      
Ersa Reel Design Change 22/Aug/2022      
Ersa STD5N52K3 View All Specifications      
Ersa STB,STD,STF,STP,STU5N52K3      
Ersa New Lead Frame Design 17/Mar/2023      

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