STMicroelectronics_STD1NK60T4

STMicroelectronics
STD1NK60T4  
Single FETs, MOSFETs

STMicroelectronics
STD1NK60T4
278-STD1NK60T4
MOSFET N-CH 600V 1A DPAK
In Stock : 10449

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    STD1NK60T4 Description

    STD1NK60T4 Description

    The STD1NK60T4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 1A at 25°C, this device is well-suited for a variety of power electronics applications. The STD1NK60T4 is packaged in a DPAK package, making it ideal for surface mount applications.

    STD1NK60T4 Features

    • 600V Drain-to-Source Voltage (Vdss): Provides high voltage capability for demanding power electronics applications.
    • 1A Continuous Drain Current (Id) @ 25°C: Offers robust current handling for efficient power delivery.
    • 8.5Ω Rds On (Max) @ 500mA, 10V: Ensures low on-resistance for minimal power loss during operation.
    • 3.7V Vgs(th) (Max) @ 250µA: Delivers reliable threshold voltage performance for consistent switching.
    • 10V Drive Voltage (Max Rds On, Min Rds On): Facilitates easy gate drive requirements for simplified circuit design.
    • 156pF Input Capacitance (Ciss) (Max) @ 25V: Minimizes input capacitance for faster switching speeds.
    • 10nC Gate Charge (Qg) (Max) @ 10V: Reduces switching losses and improves efficiency.
    • 30W Power Dissipation (Max): Allows for high power dissipation, making it suitable for high-power applications.
    • SuperMESH™ Series: Offers superior performance and reliability compared to standard MOSFETs.

    STD1NK60T4 Applications

    The STD1NK60T4 is ideal for a wide range of power electronics applications, including:

    • Power Supplies: Due to its high voltage and current ratings, the STD1NK60T4 is well-suited for power supply designs.
    • Motor Controls: Its low on-resistance and high voltage capabilities make it an excellent choice for motor control applications.
    • Industrial Automation: The robust performance and high power dissipation of the STD1NK60T4 make it ideal for industrial automation systems.
    • Automotive Electronics: The device's high voltage and current ratings, along with its low on-resistance, make it suitable for automotive electronics applications.

    Conclusion of STD1NK60T4

    The STD1NK60T4 from STMicroelectronics is a high-performance N-Channel MOSFET that offers a combination of high voltage, low on-resistance, and low gate charge. Its robust performance, combined with its SuperMESH™ technology, makes it an excellent choice for a variety of power electronics applications. With its high power dissipation and reliable threshold voltage performance, the STD1NK60T4 is a versatile and efficient solution for demanding power electronics designs.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Tab
    Length
    Forward Transconductance - Min
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Operating Temperature (°C) (max)
    Operating Temperature (°C) (min)
    Grade
    ECCN (EU)
    RoHs compliant

    STD1NK60T4 Documents

    Download datasheets and manufacturer documentation for STD1NK60T4

    Ersa STD1NK60T4 Datasheet      
    Ersa STEVAL-ISB001V1: 1 Cell Charger using Discretes      
    Ersa STB11NK40Z View All Specifications      

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