STMicroelectronics_STD12NF06T4

STMicroelectronics
STD12NF06T4  
Single FETs, MOSFETs

STMicroelectronics
STD12NF06T4
278-STD12NF06T4
MOSFET N-CH 60V 12A DPAK
In Stock : 4205

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STD12NF06T4 Description

STD12NF06T4 Description

The STD12NF06T4 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for a wide range of applications in the electronics industry. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 12A at 25°C, this MOSFET offers excellent electrical characteristics for demanding power management and switching applications. The device is housed in a DPAK package, making it suitable for surface mount applications.

STD12NF06T4 Features

  • Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power loss in switching applications.
  • Gate Charge (Qg): 12 nC @ 10V - Minimizes switching losses and improves overall performance.
  • Input Capacitance (Ciss): 315 pF @ 25V - Reduces input capacitance, enabling faster switching speeds.
  • Rds On (Max): 100 mΩ @ 6A, 10V - Offers low on-resistance for efficient power delivery.
  • Vgs(th) (Max): 4V @ 250µA - Ensures reliable turn-on and stable operation.
  • Drive Voltage: 10V - Simplifies gate drive requirements and reduces complexity in circuit design.
  • Power Dissipation (Max): 30W (Tc) - Allows for high power applications without the need for additional cooling solutions.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Ensures reliable performance in various environmental conditions.
  • RoHS Status: ROHS3 Compliant - Meets environmental regulations and is suitable for green electronics designs.

STD12NF06T4 Applications

The STD12NF06T4 is ideal for a variety of applications where high efficiency, low power loss, and reliable operation are critical. Some specific use cases include:

  1. Power Management: In power supply designs, the STD12NF06T4 can be used as a high-side or low-side switch to manage power flow with minimal losses.
  2. Motor Control: The device's high current capability and low on-resistance make it suitable for driving motors in industrial and automotive applications.
  3. Battery Protection: In battery management systems, the STD12NF06T4 can be used to protect batteries from overcharging and over-discharging, ensuring safe and reliable operation.
  4. Inverters and Converters: The high voltage and current ratings of the STD12NF06T4 make it suitable for use in inverter and converter designs, where high efficiency and low power loss are critical.

Conclusion of STD12NF06T4

The STD12NF06T4 from STMicroelectronics is a versatile and high-performance N-Channel MOSFET that offers excellent electrical characteristics and reliability for a wide range of applications. Its low on-resistance, high voltage and current ratings, and compliance with environmental regulations make it an ideal choice for power management, motor control, battery protection, and inverter/converter designs. With its unique features and advantages over similar models, the STD12NF06T4 is a valuable addition to any electronics engineer's toolbox.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STD12NF06T4 Documents

Download datasheets and manufacturer documentation for STD12NF06T4

Ersa Mult Dev Assembly Chg 18/Oct/2019      
Ersa STD12NF06(T4)      
Ersa Box Label Chg 28/Jul/2016      
Ersa STD12NF06T4 View All Specifications      
Ersa STD12NF06(T4)      

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