STMicroelectronics_STQ2HNK60ZR-AP

STMicroelectronics
STQ2HNK60ZR-AP  
Single FETs, MOSFETs

STMicroelectronics
STQ2HNK60ZR-AP
278-STQ2HNK60ZR-AP
Ersa
STMicroelectronics-STQ2HNK60ZR-AP-datasheets-1641486.pdf
MOSFET N-CH 600V 500MA TO92-3
In Stock : 3062

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STQ2HNK60ZR-AP Description

STQ2HNK60ZR-AP Description

The STQ2HNK60ZR-AP is a high-performance MOSFET N-CH 600V 500mA TO92-3 device manufactured by STMicroelectronics. This single FET is designed to deliver exceptional performance in various electronic applications. With a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 500mA at 25°C, this device is well-suited for high-voltage, high-current applications.

STQ2HNK60ZR-AP Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
  • Input Capacitance (Ciss): 280 pF @ 25 V - Minimizes input capacitance, reducing power consumption and improving performance.
  • Gate Charge (Qg): 15 nC @ 10 V - Reduces switching losses and improves efficiency.
  • Drain to Source Voltage (Vdss): 600 V - Suitable for high-voltage applications.
  • Power Dissipation (Max): 3W (Tc) - Capable of handling high power dissipation.
  • Rds On (Max) @ Id, Vgs: 4.8 Ohm @ 1A, 10V - Offers low on-resistance for efficient power management.
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA - Ensures reliable threshold voltage performance.
  • Series: SuperMESH™ - Known for its superior electrical characteristics and thermal performance.
  • Mounting Type: Through Hole - Facilitates easy integration into various electronic systems.
  • Package: Cut Tape (CT) - Ideal for automated assembly processes.

STQ2HNK60ZR-AP Applications

The STQ2HNK60ZR-AP is ideal for a wide range of applications, including:

  1. Power Supplies: Its high voltage and current ratings make it suitable for power supply designs.
  2. Motor Controls: The device's low on-resistance and high current capability make it ideal for motor control applications.
  3. Automotive Electronics: The STQ2HNK60ZR-AP's robust performance and high voltage ratings make it suitable for automotive electronics, such as power windows and lighting systems.
  4. Industrial Controls: Its ability to handle high voltages and currents makes it well-suited for industrial control systems.

Conclusion of STQ2HNK60ZR-AP

The STQ2HNK60ZR-AP is a versatile and high-performance MOSFET from STMicroelectronics. Its unique combination of high voltage, low on-resistance, and excellent electrical characteristics make it an ideal choice for a wide range of applications, including power supplies, motor controls, automotive electronics, and industrial controls. With its SuperMESH™ series and through-hole mounting, the STQ2HNK60ZR-AP offers a reliable and efficient solution for demanding electronic systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STQ2HNK60ZR-AP Documents

Download datasheets and manufacturer documentation for STQ2HNK60ZR-AP

Ersa Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

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