STMicroelectronics_STD4NK50ZT4

STMicroelectronics
STD4NK50ZT4  
Single FETs, MOSFETs

STMicroelectronics
STD4NK50ZT4
278-STD4NK50ZT4
MOSFET N-CH 500V 3A DPAK
In Stock : 1004

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    STD4NK50ZT4 Description

    The STD4NK50ZT4 is a high voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including power electronics, motor control, and automotive systems.

    Description:

    The STD4NK50ZT4 is an N-channel enhancement mode MOSFET with a drain-to-source voltage (VDS) of 500V and a continuous drain current (ID) of 4.1A (Ta = 25°C). It features a low on-state resistance (RDS(on)) of 45mΩ (maximum) at a gate-source voltage (VGS) of 10V.

    Features:

    1. High voltage rating: The STD4NK50ZT4 can handle a drain-to-source voltage of up to 500V, making it suitable for high voltage applications.
    2. Low on-state resistance: The low RDS(on) of 45mΩ (maximum) at VGS = 10V helps to minimize power dissipation and improve efficiency in switching applications.
    3. High switching speed: The device has a fast switching time, which makes it suitable for high-frequency applications.
    4. Avalanche energy capable: The STD4NK50ZT4 can withstand high energy during avalanche conditions, making it suitable for applications with high surge currents.
    5. Built-in body diode: The MOSFET features a built-in body diode for efficient energy transfer during switching operations.

    Applications:

    1. Power electronics: The STD4NK50ZT4 is suitable for use in power electronic converters, such as AC/DC and DC/DC converters.
    2. Motor control: The MOSFET can be used in motor control applications, including brushless DC motors and stepper motors.
    3. Automotive systems: The device is suitable for various automotive applications, such as electric power steering, air conditioning systems, and windshield wipers.
    4. Industrial control: The STD4NK50ZT4 can be used in industrial control systems, including servo drives and robotic systems.
    5. Telecommunications: The MOSFET can be used in power supply systems for telecommunications equipment, such as base stations and switching systems.

    In summary, the STD4NK50ZT4 is a high voltage N-channel MOSFET from STMicroelectronics, designed for use in a wide range of power electronic and motor control applications. Its key features include high voltage rating, low on-state resistance, high switching speed, avalanche energy capability, and a built-in body diode.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STD4NK50ZT4 Documents

    Download datasheets and manufacturer documentation for STD4NK50ZT4

    Ersa ST(D,P)4NK50Z(FP,-1)      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STB11NK40Z View All Specifications      
    Ersa ST(D,P)4NK50Z(FP,-1)      

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