The STD4NK50ZT4 is a high voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including power electronics, motor control, and automotive systems.
Description:
The STD4NK50ZT4 is an N-channel enhancement mode MOSFET with a drain-to-source voltage (VDS) of 500V and a continuous drain current (ID) of 4.1A (Ta = 25°C). It features a low on-state resistance (RDS(on)) of 45mΩ (maximum) at a gate-source voltage (VGS) of 10V.
Features:
- High voltage rating: The STD4NK50ZT4 can handle a drain-to-source voltage of up to 500V, making it suitable for high voltage applications.
- Low on-state resistance: The low RDS(on) of 45mΩ (maximum) at VGS = 10V helps to minimize power dissipation and improve efficiency in switching applications.
- High switching speed: The device has a fast switching time, which makes it suitable for high-frequency applications.
- Avalanche energy capable: The STD4NK50ZT4 can withstand high energy during avalanche conditions, making it suitable for applications with high surge currents.
- Built-in body diode: The MOSFET features a built-in body diode for efficient energy transfer during switching operations.
Applications:
- Power electronics: The STD4NK50ZT4 is suitable for use in power electronic converters, such as AC/DC and DC/DC converters.
- Motor control: The MOSFET can be used in motor control applications, including brushless DC motors and stepper motors.
- Automotive systems: The device is suitable for various automotive applications, such as electric power steering, air conditioning systems, and windshield wipers.
- Industrial control: The STD4NK50ZT4 can be used in industrial control systems, including servo drives and robotic systems.
- Telecommunications: The MOSFET can be used in power supply systems for telecommunications equipment, such as base stations and switching systems.
In summary, the STD4NK50ZT4 is a high voltage N-channel MOSFET from STMicroelectronics, designed for use in a wide range of power electronic and motor control applications. Its key features include high voltage rating, low on-state resistance, high switching speed, avalanche energy capability, and a built-in body diode.