STMicroelectronics_STW35N65M5

STMicroelectronics
STW35N65M5  
Single FETs, MOSFETs

STMicroelectronics
STW35N65M5
278-STW35N65M5
Ersa
STMicroelectronics-STW35N65M5-datasheets-13372394.pdf
MOSFET N-CH 650V 27A TO247-3
In Stock : 10805

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STW35N65M5 Description

STW35N65M5 Description

The STW35N65M5 from STMicroelectronics is a 650V N-channel MOSFET belonging to the MDmesh™ V series, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 27A (at Tc=25°C) and a low on-resistance (Rds(on)) of 98mΩ (at 10V Vgs), it offers superior performance in high-voltage circuits. The device features a fast switching capability, supported by a gate charge (Qg) of 83nC and an input capacitance (Ciss) of 3750pF, ensuring reduced switching losses. Although marked as obsolete, its robust design and 160W power dissipation (Tc) make it suitable for legacy or long-lifecycle systems.

STW35N65M5 Features

  • High Voltage Rating: 650V Vdss for demanding industrial and automotive applications.
  • Low Rds(on): 98mΩ @ 10V Vgs minimizes conduction losses, improving efficiency.
  • Fast Switching: Optimized Qg (83nC) and Ciss (3750pF) for reduced switching delays.
  • Thermal Performance: 160W max power dissipation and 150°C junction temperature (TJ) rating ensure reliability under high stress.
  • Robust Construction: TO-247-3 package provides excellent thermal management and mechanical durability.
  • Compliance: RoHS3 and REACH compliant, with ±25V Vgs(max) for flexible gate driving.

STW35N65M5 Applications

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives: Efficient control in industrial inverters and servo systems.
  • Renewable Energy: Solar inverters and wind power converters requiring high-voltage blocking.
  • Automotive Systems: Electric vehicle (EV) charging and auxiliary power units.
  • Industrial Equipment: Welding machines, UPS systems, and high-power LED drivers.

Conclusion of STW35N65M5

The STW35N65M5 is a high-performance 650V MOSFET optimized for efficiency and reliability in high-voltage, high-current applications. Its low Rds(on), fast switching, and thermal robustness make it ideal for power electronics where energy efficiency and durability are critical. While obsolete, its MDmesh™ V technology ensures it remains a viable choice for legacy designs or systems requiring long-term stability. Engineers should evaluate alternative modern equivalents for new designs while considering this model for maintenance or upgrades.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number

STW35N65M5 Documents

Download datasheets and manufacturer documentation for STW35N65M5

Ersa STx35N65M5      
Ersa IPD/15/9345 04/Aug/2015      
Ersa STx35N65M5      

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