The STW35N65M5 from STMicroelectronics is a 650V N-channel MOSFET belonging to the MDmesh™ V series, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 27A (at Tc=25°C) and a low on-resistance (Rds(on)) of 98mΩ (at 10V Vgs), it offers superior performance in high-voltage circuits. The device features a fast switching capability, supported by a gate charge (Qg) of 83nC and an input capacitance (Ciss) of 3750pF, ensuring reduced switching losses. Although marked as obsolete, its robust design and 160W power dissipation (Tc) make it suitable for legacy or long-lifecycle systems.
The STW35N65M5 is a high-performance 650V MOSFET optimized for efficiency and reliability in high-voltage, high-current applications. Its low Rds(on), fast switching, and thermal robustness make it ideal for power electronics where energy efficiency and durability are critical. While obsolete, its MDmesh™ V technology ensures it remains a viable choice for legacy designs or systems requiring long-term stability. Engineers should evaluate alternative modern equivalents for new designs while considering this model for maintenance or upgrades.
Download datasheets and manufacturer documentation for STW35N65M5