STMicroelectronics_STL100N10F7

STMicroelectronics
STL100N10F7  
Single FETs, MOSFETs

STMicroelectronics
STL100N10F7
278-STL100N10F7
Ersa
STMicroelectronics-STL100N10F7-datasheets-6881879.pdf
MOSFET N-CH 100V 80A POWERFLAT
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    STL100N10F7 Description

    STMicroelectronics' STL100N10F7 is a high-voltage, high-power N-channel MOSFET transistor. It is designed for use in a wide range of applications, including power electronics, motor control, and industrial automation.

    Description:

    The STL100N10F7 is an N-channel enhancement mode field-effect transistor (MOSFET) with a 1000V drain-to-source breakdown voltage and a continuous drain current rating of 10A. It features a low on-state resistance (RDS(on)) of 75mΩ maximum at a gate-to-source voltage (VGS) of 10V, and a fast switching speed with a typical gate charge (Qg) of 45nC.

    Features:

    • High voltage rating: 1000V drain-to-source breakdown voltage
    • High current capability: Continuous drain current rating of 10A
    • Low on-state resistance: 75mΩ maximum at VGS = 10V
    • Fast switching speed: Typical gate charge (Qg) of 45nC
    • Enhancement mode operation
    • Suitable for use in high-power applications

    Applications:

    The STL100N10F7 is suitable for use in a variety of high-power applications, including:

    1. Power electronics: The STL100N10F7 can be used in power conversion circuits, such as DC-DC converters and AC-DC power supplies.
    2. Motor control: The MOSFET's high voltage and current ratings make it suitable for use in motor control applications, such as in industrial automation and robotics.
    3. Automotive: The STL100N10F7 can be used in automotive applications, such as electric vehicle charging systems and power steering systems.
    4. Renewable energy: The MOSFET can be used in renewable energy systems, such as solar power inverters and wind turbine converters.
    5. Industrial automation: The STL100N10F7 can be used in industrial automation applications, such as in motor drives and power supplies for industrial machinery.

    Overall, the STL100N10F7 is a versatile and high-performance MOSFET that is well-suited for use in a wide range of high-power applications. Its high voltage and current ratings, low on-state resistance, and fast switching speed make it a popular choice for power electronics, motor control, and industrial automation applications.

    Tech Specifications

    Unit Weight
    Configuration
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STL100N10F7 Documents

    Download datasheets and manufacturer documentation for STL100N10F7

    Ersa STL100N10F7      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
    Ersa STL100N10F7 View All Specifications      
    Ersa STL100N10F7      
    Ersa Mult Dev Mark Chg 9/Sep/2020      

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