STMicroelectronics

STF18N60DM2  

Single FETs, MOSFETs

STF18N60DM2 Description

The STF18N60DM2 is a high-performance N-Channel MOSFET from STMicroelectronics, designed for a wide range of applications requiring high voltage and current capabilities. This device features a robust 600V drain-to-source voltage rating and can handle continuous drain currents up to 13A at 25°C. With a maximum power dissipation of 25W, the STF18N60DM2 is well-suited for demanding power electronic applications.

STF18N60DM2 Features

• 600V Drain-to-Source Voltage (Vdss): Ensures reliable operation in high-voltage environments.
• 13A Continuous Drain Current (Id) @ 25°C: Provides ample current handling capabilities for various power electronic applications.
• 25W Maximum Power Dissipation (Tc): Allows for efficient heat management in demanding conditions.
• Low Rds On (Max) @ Id, Vgs: 295mOhm @ 6A, 10V, contributing to high efficiency and low power loss.
• 5V Vgs(th) (Max) @ Id: Facilitates easy gate drive and control.
• Through Hole Mounting Type: Offers flexibility in PCB design and ease of integration.
• TO220FP Package: Provides a compact and robust package suitable for various applications.
• REACH Unaffected and RoHS3 Compliant: Ensures environmental compliance and sustainability.
• Moisture Sensitivity Level (MSL) 1: Allows for unlimited storage time, reducing handling concerns.

STF18N60DM2 Applications

The STF18N60DM2 is ideal for applications that require high voltage and current handling capabilities, such as:

• Power Supplies: Utilized in switching power supplies for efficient voltage regulation.
• Motor Controls: Employed in motor drive circuits for precise speed and torque control.
• Industrial Automation: Used in control systems for reliable and robust operation in harsh environments.
• Automotive Applications: Suitable for in-vehicle power electronics, such as battery management systems and electric power steering.

Conclusion of STF18N60DM2

The STF18N60DM2 from STMicroelectronics stands out as a versatile and robust MOSFET, offering a combination of high voltage, current, and power capabilities. Its low Rds On and easy gate drive make it an excellent choice for high-efficiency power electronic designs. With its compliance to environmental standards and moisture sensitivity level, the STF18N60DM2 is not only a high-performing device but also an environmentally conscious option for various applications in power electronics and industrial control systems.

STF18N60DM2 Documents

Download datasheets and manufacturer documentation for STF18N60DM2

PCN Assembly/Origin :

Wafer 15/Feb/2019      

Datasheets :

STF18N60DM2      

HTML Datasheet :

STF18N60DM2