STMicroelectronics_STP50NF25

STMicroelectronics
STP50NF25  
Single FETs, MOSFETs

STMicroelectronics
STP50NF25
278-STP50NF25
Ersa
STMicroelectronics-STP50NF25-datasheets-9971417.pdf
MOSFET N-CH 250V 45A TO220AB
In Stock : 2544

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STP50NF25 Description

STP50NF25 Description

The STP50NF25 is a high-performance N-channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 45A at 25°C, this device is ideal for power electronics and motor control applications. The STP50NF25 is manufactured using STMicroelectronics' advanced STripFET™ technology, ensuring low on-resistance and high efficiency.

STP50NF25 Features

  • Low On-Resistance: The STP50NF25 boasts an ultra-low Rds(on) of 69mΩ at 22A and 10V, minimizing power losses and improving efficiency.
  • High Drain Current: Capable of handling up to 45A continuous drain current at 25°C, this MOSFET is suitable for high-power applications.
  • Robust Voltage Ratings: With a drain-to-source voltage (Vdss) of 250V and a gate-to-source voltage (Vgs) of ±20V, the STP50NF25 can handle high voltages in various applications.
  • Efficient Switching: The device features a low gate charge (Qg) of 68.2nC at 10V, enabling fast switching and reducing switching losses.
  • Thermal Performance: The STP50NF25 can dissipate up to 160W of power, making it suitable for high-power applications where heat management is crucial.
  • Environmental Compliance: The device is REACH unaffected and RoHS3 compliant, ensuring environmental safety and regulatory compliance.

STP50NF25 Applications

The STP50NF25 is ideal for a wide range of applications where high power handling, efficient switching, and robust voltage ratings are required. Some specific use cases include:

  1. Power Electronics: The STP50NF25's high power dissipation and low on-resistance make it suitable for power supply designs, including DC-DC converters and power factor correction circuits.
  2. Motor Control: The device's high current handling capability and low on-resistance are ideal for motor drive applications, such as electric vehicles, industrial motor control, and robotics.
  3. Industrial Automation: The STP50NF25 can be used in various industrial automation applications, such as servo drives, variable frequency drives, and programmable logic controllers, where high power and efficient switching are essential.

Conclusion of STP50NF25

The STP50NF25 is a versatile and high-performance N-channel MOSFET from STMicroelectronics, offering a combination of low on-resistance, high drain current, and robust voltage ratings. Its advanced STripFET™ technology ensures efficient switching and improved thermal performance, making it an excellent choice for power electronics, motor control, and industrial automation applications. With its environmental compliance and high power dissipation capabilities, the STP50NF25 is a reliable and efficient solution for demanding applications in the electronics industry.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STP50NF25 Documents

Download datasheets and manufacturer documentation for STP50NF25

Ersa ST(B,P)50NF25      
Ersa STP50NF25 View All Specifications      
Ersa ST(B,P)50NF25      

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