STMicroelectronics_STP9NK60Z

STMicroelectronics
STP9NK60Z  
Single FETs, MOSFETs

STMicroelectronics
STP9NK60Z
278-STP9NK60Z
MOSFET N-CH 600V 7A TO220AB
In Stock : 15081

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STP9NK60Z Description

STP9NK60Z Description

The STP9NK60Z is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 7A at 25°C, this N-channel device offers excellent electrical characteristics for demanding power electronics applications.

STP9NK60Z Features

  • Technology: Advanced MOSFET technology ensures high efficiency and low power dissipation.
  • Power Dissipation: Capable of handling up to 125W (Tc), making it suitable for high-power applications.
  • Input Capacitance: Low input capacitance (Ciss) of 1110 pF @ 25V ensures fast switching and reduced power loss.
  • Gate Charge: Minimal gate charge (Qg) of 53 nC @ 10V contributes to faster switching and lower power consumption.
  • Mounting Type: Through-hole mounting provides robust mechanical support and easy integration into existing designs.
  • Package: The TO220AB package is a standard, widely used package for power MOSFETs, ensuring compatibility with various applications.
  • Series: Part of the SuperMESH™ series, known for their superior performance and reliability in power management applications.
  • RDS(on): Low RDS(on) of 950mOhm @ 3.5A, 10V ensures high efficiency and low power loss during operation.
  • Vgs(th): High threshold voltage (Vgs(th)) of 4.5V @ 100µA provides robust operation and improved noise immunity.

STP9NK60Z Applications

The STP9NK60Z is ideal for a variety of applications where high voltage and current handling are required, including:

  • Power Supplies: In switch-mode power supplies (SMPS) and power conversion circuits.
  • Motor Controls: For electric motor drives and control systems, providing efficient power switching.
  • Automotive Electronics: In automotive power management systems, where high reliability and performance are critical.
  • Industrial Controls: For high-power industrial control systems, ensuring efficient and reliable operation.

Conclusion of STP9NK60Z

The STP9NK60Z is a versatile and high-performance MOSFET from STMicroelectronics, offering a combination of high voltage and current handling capabilities, low power dissipation, and fast switching. Its robust design and features make it an excellent choice for a wide range of power electronics applications, from power supplies to motor controls and automotive electronics. With its advanced technology and performance benefits, the STP9NK60Z stands out as a reliable and efficient solution for demanding power management needs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STP9NK60Z Documents

Download datasheets and manufacturer documentation for STP9NK60Z

Ersa ST(B,P)9NK60Z(FP,-1)      
Ersa STP9NK60Z View All Specifications      
Ersa ST(B,P)9NK60Z(FP,-1)      

Shopping Guide

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