STMicroelectronics_SCT30N120
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STMicroelectronics
SCT30N120

278-SCT30N120
PDF Datasheet
SiC Power MOSFET 1.2kV 40A 80mR N-CH TO-247
52 Weeks

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Tech Specifications

Package/Case
TO-247-3
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
1.2kV
Drain to Source Resistance
80mR
Drain to Source Voltage (Vdss)
1.2kV
Fall Time
28ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
1.7nF
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SCT30N120 Description

SCT30N120 Description

The SCT30N120 is a high-performance Silicon Carbide (SiC) Field-Effect Transistor (FET) from STMicroelectronics. It offers superior performance in high-voltage, high-power applications. With a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 40A at 25°C, the SCT30N120 is designed for demanding applications that require high efficiency and reliability.

SCT30N120 Features

  • High Voltage and Current Ratings: The SCT30N120 boasts a drain-source voltage (Vdss) of 1200V and a continuous drain current (Id) of 40A at 25°C, making it suitable for high-voltage, high-power applications.
  • Low On-Resistance: The SCT30N120 has a maximum on-resistance (Rds On) of 100mΩ at 20A and 20V, contributing to high efficiency and low power dissipation.
  • Fast Switching Speed: With a maximum gate threshold voltage (Vgs(th)) of 2.6V at 1mA, the SCT30N120 offers fast switching speeds, reducing switching losses and improving overall performance.
  • Robust Package: The SCT30N120 is available in the HiP247™ package, providing excellent thermal performance and mechanical robustness.
  • Environmental Compliance: The SCT30N120 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.
  • Moisture Sensitivity Level (MSL) 1: The SCT30N120 has an MSL of 1, indicating unlimited storage time before reflow soldering, simplifying handling and assembly processes.

SCT30N120 Applications

The SCT30N120 is ideal for a wide range of high-voltage, high-power applications, including:

  1. Electric Vehicle (EV) Charging Systems: The SCT30N120's high voltage and current ratings make it suitable for high-power EV charging systems, enabling fast charging and high efficiency.
  2. Renewable Energy Systems: In solar inverters and wind power converters, the SCT30N120's high efficiency and robustness contribute to reliable and long-lasting operation.
  3. Industrial Power Supplies: The SCT30N120's low on-resistance and fast switching speeds make it an excellent choice for high-efficiency power supplies in industrial applications.
  4. Motor Drives: In high-power motor drives, the SCT30N120's high voltage and current ratings, combined with its low on-resistance, enable high torque and high efficiency.

Conclusion of SCT30N120

The SCT30N120 from STMicroelectronics is a high-performance SiC FET designed for demanding high-voltage, high-power applications. Its unique combination of high voltage and current ratings, low on-resistance, and fast switching speeds make it an ideal choice for EV charging systems, renewable energy systems, industrial power supplies, and motor drives. With its robust package, environmental compliance, and moisture sensitivity level of 1, the SCT30N120 offers a reliable and efficient solution for a wide range of applications.

FAQ

What is the mounting type of SCT30N120?
SCT30N120 uses a Through Hole mounting style based on the listed product specifications.
What package or case is SCT30N120 available in?
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Availability (In Stock : 4 )
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1+ $31.32172 $31.32
30+ $29.87143 $896.14
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