STMicroelectronics_STB100N10F7

STMicroelectronics
STB100N10F7  
Single FETs, MOSFETs

STMicroelectronics
STB100N10F7
278-STB100N10F7
Ersa
STMicroelectronics-STB100N10F7-datasheets-10259879.pdf
MOSFET N-CH 100V 80A D2PAK
In Stock : 947

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
  • Quantity
  • Unit Price
  • Ext. Price
    • 1+
    • $5.26442
    • $5.26
    • 10+
    • $4.59043
    • $45.9
    • 30+
    • $3.76922
    • $113.08
    • 100+
    • $3.40556
    • $340.56
    • 500+
    • $3.23715
    • $1618.58
    • 1000+
    • $3.16114
    • $3161.14
    ADD TO CART
    QUICK ORDER
    $5.26442    $5.26
    ISO9001
    Quality Policy
    ISO45001
    ISO14001

    STB100N10F7 Description

    STB100N10F7 Description

    The STB100N10F7 is a high-performance MOSFET N-CH 100V 80A D2PAK manufactured by STMicroelectronics. This single FET is designed for applications requiring high power dissipation and low on-resistance. With its DeepGATE™ and STripFET™ VII series, the STB100N10F7 offers superior performance and reliability.

    STB100N10F7 Features

    • Technology: MOSFET (Metal Oxide)
    • Drain to Source Voltage (Vdss): 100V
    • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
    • Power Dissipation (Max): 150W (Tc)
    • Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V
    • Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
    • Input Capacitance (Ciss) (Max) @ Vds: 4369 pF @ 50 V
    • Vgs (Max): ±20V
    • Vgs(th) (Max) @ Id: 4.5V @ 250µA
    • Drive Voltage (Max Rds On, Min Rds On): 10V
    • Mounting Type: Surface Mount
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • REACH Status: REACH Unaffected
    • RoHS Status: ROHS3 Compliant
    • ECCN: EAR99
    • HTSUS: 8541.29.0095
    • Package: Tape & Reel (TR)
    • Base Product Number: STB100

    STB100N10F7 Applications

    The STB100N10F7 is ideal for various high-power applications due to its low on-resistance and high power dissipation capabilities. Some specific use cases include:

    1. Power Supplies: The STB100N10F7's high drain current and low on-resistance make it suitable for power supply applications, where efficient power conversion is crucial.
    2. Motor Drives: In motor drive applications, the STB100N10F7 can handle high currents and voltages, ensuring reliable operation and long device life.
    3. Industrial Control Systems: The STB100N10F7's robust performance and reliability make it a suitable choice for industrial control systems, where high power dissipation and low on-resistance are essential.

    Conclusion of STB100N10F7

    The STB100N10F7 is a high-performance MOSFET N-CH 100V 80A D2PAK from STMicroelectronics, offering superior performance and reliability for high-power applications. Its unique features, such as low on-resistance, high power dissipation, and robust performance, make it an ideal choice for power supplies, motor drives, and industrial control systems. With its REACH unaffected and RoHS3 compliant status, the STB100N10F7 is an environmentally friendly option for high-power electronic devices.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STB100N10F7 Documents

    Download datasheets and manufacturer documentation for STB100N10F7

    Ersa STx100N10F7 DataSheet      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021      
    Ersa STx100N10F7 DataSheet      
    Ersa IPG-PWR/14/8422 11/Apr/2014      

    Shopping Guide

    Payment Methods
    Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
    Delivery Methods
    Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service