STMicroelectronics

SCTWA90N65G2V

SCTWA90N65G2V Description

The SCTWA90N65G2V is a Silicon Carbide (SiC) Power MOSFET manufactured by STMicroelectronics. This device is designed for high-performance applications that require efficient power management and switching. With a drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 119A at 25°C, the SCTWA90N65G2V is capable of handling high power levels. It features a low on-resistance (Rds On) of 24mOhm at 50A and 18V, which contributes to its high efficiency and low power loss.

SCTWA90N65G2V Features

• High Drain-to-Source Voltage (Vdss): 650V, suitable for high-voltage applications.
• Low On-Resistance (Rds On): 24mOhm at 50A and 18V, reducing power loss and improving efficiency.
• High Continuous Drain Current (Id): 119A at 25°C, capable of handling high current loads.
• Silicon Carbide (SiC) Technology: Offers superior performance compared to traditional silicon-based devices.
• Low Gate Charge (Qg): 157 nC at 18V, reducing switching losses and improving efficiency.
• Low Input Capacitance (Ciss): 3380 pF at 400V, contributing to faster switching speeds.
• Compliance with Regulations: REACH Unaffected, RoHS3 Compliant, and EAR99 classification.

SCTWA90N65G2V Applications

The SCTWA90N65G2V is ideal for applications that demand high efficiency, fast switching, and the ability to handle high voltages and currents. Some specific use cases include:

• Electric Vehicle (EV) Charging Stations: Efficient power management and high-voltage handling make it suitable for EV charging infrastructure.
• Renewable Energy Systems: Its high efficiency and ability to handle high power levels are beneficial in solar and wind energy systems.
• Industrial Automation: Fast switching and low power loss are advantageous in motor control and power conversion applications.
• Power Supplies: The high voltage and current ratings make it suitable for high-power switching in power supply designs.

Conclusion of SCTWA90N65G2V

The SCTWA90N65G2V is a high-performance Silicon Carbide Power MOSFET that offers significant advantages over traditional silicon-based devices. Its high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for demanding applications in various industries. With its compliance with environmental and trade regulations, the SCTWA90N65G2V is a reliable and efficient solution for high-power electronic designs.