German
Japanese
Portuguese
Korea
Mexico
Dutch
STMicroelectronics
STU11NM60ND
278-STU11NM60ND
PDF Datasheet
10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible quality
.png)
Tech Specifications
Package / Case
TO-251-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
600V
Fall Time
9ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
STU11NM60ND Description
N-Channel 600 V 10A (Tc) 90W (Tc) Through Hole IPAK
FAQ
Are there related or alternative parts for STU11NM60ND?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is the mounting type of STU11NM60ND?
What is STU11NM60ND?
What operating temperature range does STU11NM60ND support?
What package or case is STU11NM60ND available in?
Quick Quote
ADD TO RFQ LIST
Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately
QUICK RFQ
.png?x-oss-process=image/format,webp/resize,h_32)
