STMicroelectronics_STP13NK60Z

STMicroelectronics
STP13NK60Z  
Single FETs, MOSFETs

STMicroelectronics
STP13NK60Z
278-STP13NK60Z
MOSFET N-CH 600V 13A TO220AB
In Stock : 1050

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STP13NK60Z Description

STP13NK60Z Description

The STP13NK60Z from STMicroelectronics is a 600V N-channel MOSFET belonging to the SuperMESH™ series, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 13A (at Tc=25°C) and a low on-resistance (Rds(on)) of 550mΩ at 10V gate drive, it offers superior performance in high-voltage circuits. The device features a robust 600V drain-to-source voltage (Vdss) rating, making it suitable for demanding environments. Packaged in a TO-220AB through-hole format, it ensures reliable thermal dissipation with a maximum power dissipation of 150W (Tc).

STP13NK60Z Features

  • High Voltage & Current Handling: 600V Vdss and 13A Id for power applications.
  • Low Rds(on): 550mΩ @ 10V Vgs minimizes conduction losses.
  • Fast Switching: Optimized gate charge (Qg = 92nC @ 10V) and input capacitance (Ciss = 2030pF @ 25V) for efficient operation.
  • Wide Gate Drive Range: Supports ±30V Vgs(max), enhancing flexibility in drive circuits.
  • Thermal Efficiency: TO-220AB package with high power dissipation capability.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.

STP13NK60Z Applications

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and offline power supplies.
  • Motor Control: Inverters and H-bridge configurations for industrial drives.
  • Lighting Systems: Ballasts and LED drivers requiring efficient switching.
  • Renewable Energy: Solar inverters and battery management systems.
  • Industrial Automation: High-power relay replacements and solid-state switches.

Conclusion of STP13NK60Z

The STP13NK60Z stands out as a high-performance 600V MOSFET with low conduction losses, fast switching, and excellent thermal management, making it ideal for high-efficiency power electronics. Its SuperMESH™ technology ensures superior performance in demanding applications like SMPS, motor drives, and renewable energy systems. With STMicroelectronics' proven reliability, this MOSFET is a robust choice for engineers seeking a balance of power handling, efficiency, and durability.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Maximum Continuous Drain Current (A)
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Supplier Temperature Grade
Rds On (Max) @ Id, Vgs
Standard Package Name
Typical Reverse Recovery Charge (nC)
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Vgs th - Gate-Source Threshold Voltage
Package
Typical Reverse Recovery Time (ns)
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
Typical Gate Threshold Voltage (V)
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Typical Output Capacitance (pF)
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Height
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Gate Plateau Voltage (V)
Typical Turn-Off Delay Time
Package Length
Series
Operating Junction Temperature (°C)
Forward Transconductance - Min
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STP13NK60Z Documents

Download datasheets and manufacturer documentation for STP13NK60Z

Ersa STx13NK60Z(FP,T4)      
Ersa STP13NK60Z View All Specifications      
Ersa STx13NK60Z(FP,T4)      

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