The STP13NK60Z from STMicroelectronics is a 600V N-channel MOSFET belonging to the SuperMESH™ series, designed for high-efficiency power switching applications. With a continuous drain current (Id) of 13A (at Tc=25°C) and a low on-resistance (Rds(on)) of 550mΩ at 10V gate drive, it offers superior performance in high-voltage circuits. The device features a robust 600V drain-to-source voltage (Vdss) rating, making it suitable for demanding environments. Packaged in a TO-220AB through-hole format, it ensures reliable thermal dissipation with a maximum power dissipation of 150W (Tc).
The STP13NK60Z stands out as a high-performance 600V MOSFET with low conduction losses, fast switching, and excellent thermal management, making it ideal for high-efficiency power electronics. Its SuperMESH™ technology ensures superior performance in demanding applications like SMPS, motor drives, and renewable energy systems. With STMicroelectronics' proven reliability, this MOSFET is a robust choice for engineers seeking a balance of power handling, efficiency, and durability.
Download datasheets and manufacturer documentation for STP13NK60Z