STMicroelectronics_STD2N62K3

STMicroelectronics
STD2N62K3  
Single FETs, MOSFETs

STMicroelectronics
STD2N62K3
278-STD2N62K3
Ersa
STMicroelectronics-STD2N62K3-datasheets-10490271.pdf
MOSFET N-CH 620V 2.2A DPAK
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STD2N62K3 Description

STD2N62K3 Description

The STD2N62K3 is a high-performance N-Channel MOSFET from STMicroelectronics, featuring a SuperMESH3™ series design for enhanced power efficiency and thermal management. With a drain-to-source voltage (Vdss) of 620V and a continuous drain current (Id) of 2.2A at 25°C, this device is well-suited for demanding power electronics applications.

STD2N62K3 Features

  • High Voltage and Current Ratings: The STD2N62K3 boasts a 620V drain-to-source voltage and a continuous drain current of 2.2A, making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 3.6Ω at 1.1A and 10V Vgs, this MOSFET offers low power dissipation and high efficiency.
  • Superior Thermal Performance: The DPAK package and SuperMESH3™ technology provide excellent thermal management, ensuring reliable operation at high temperatures up to 150°C TJ.
  • Robust Input and Gate Characteristics: The STD2N62K3 has a maximum input capacitance (Ciss) of 340pF at 50V and a maximum gate charge (Qg) of 15nC at 10V Vgs, ensuring fast switching and low gate drive power.
  • Compliance and Environmental Standards: This device is REACH unaffected, RoHS3 compliant, and moisture sensitivity level (MSL) 1, making it suitable for environmentally conscious designs.

STD2N62K3 Applications

The STD2N62K3 is an excellent choice for a variety of high-power applications, including:

  • Power Supplies: Its high voltage and current ratings make it ideal for power supply designs, particularly in industrial and automotive applications.
  • Motor Controls: The low on-resistance and fast switching capabilities of the STD2N62K3 make it suitable for motor control applications, providing efficient power delivery and precise control.
  • Industrial Automation: The robustness and high temperature rating of this MOSFET make it well-suited for industrial automation systems, where reliability and performance are critical.

Conclusion of STD2N62K3

The STD2N62K3 from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and superior thermal performance. Its compliance with environmental standards and robust design make it an ideal choice for a wide range of high-power applications, including power supplies, motor controls, and industrial automation systems. With its unique features and advantages over similar models, the STD2N62K3 is a reliable and efficient solution for demanding power electronics applications.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STD2N62K3 Documents

Download datasheets and manufacturer documentation for STD2N62K3

Ersa Mult Devices 27/Feb/2019      
Ersa STx2N62K3      
Ersa Box Label Chg 28/Jul/2016      
Ersa STD2N62K3 View All Specifications      
Ersa STx2N62K3      

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