The STW29NK50Z from STMicroelectronics is a 500V N-channel SuperMESH™ MOSFET designed for high-power switching applications. With a continuous drain current (Id) of 31A (Tc) and a low on-resistance (Rds(on)) of 130mΩ @ 10V, it delivers efficient power handling with minimal conduction losses. The device features a high drain-to-source voltage (Vdss) of 500V, making it suitable for demanding industrial and automotive environments. Packaged in a TO-247-3 through-hole format, it ensures robust thermal performance with a maximum power dissipation of 350W (Tc).
The STW29NK50Z is a high-performance MOSFET optimized for high-voltage, high-current applications where efficiency and reliability are critical. Its SuperMESH™ technology, low Rds(on), and robust thermal design make it ideal for power electronics in industrial, automotive, and renewable energy systems. While the product is obsolete, its legacy performance remains a benchmark for similar high-power MOSFETs. Engineers seeking alternatives should consider STMicroelectronics' newer SuperMESH™ offerings for updated specifications.
Download datasheets and manufacturer documentation for STW29NK50Z