STMicroelectronics_STU4N62K3
original

STMicroelectronics
STU4N62K3

278-STU4N62K3
PDF Datasheet
620V N-CH MOSFET, 3.8A, 2R RdsOn, IPAK
13 weeks

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Tech Specifications

Package/Case
TO-251
Continuous Drain Current (ID)
3.8A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
620V
Fall Time
19ns
Gate to Source Voltage (Vgs)
30V
Height
6.9mm
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STU4N62K3 Description

N-Channel 620 V 3.8A (Tc) 70W (Tc) Through Hole TO-251 (IPAK)

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STU4N62K3 is available in the TO-251 package / case.
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