STMicroelectronics_STD64N4F6AG

STMicroelectronics
STD64N4F6AG  
Single FETs, MOSFETs

STMicroelectronics
STD64N4F6AG
278-STD64N4F6AG
Ersa
STMicroelectronics-STD64N4F6AG-datasheets-8259935.pdf
MOSFET N-CH 40V 54A DPAK
In Stock : 2009

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

STD64N4F6AG Description

STD64N4F6AG Description

The STD64N4F6AG is a high-performance N-channel MOSFET from STMicroelectronics, designed for automotive applications. It features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 54A at 25°C. The device is housed in a DPAK package, making it suitable for surface-mount applications. With a maximum power dissipation of 60W and a low on-resistance of 8.2mOhm at 27A and 10V, the STD64N4F6AG offers excellent performance in demanding applications.

STD64N4F6AG Features

  • 40V drain-to-source voltage (Vdss)
  • 54A continuous drain current (Id) at 25°C
  • DPAK package for surface-mount applications
  • 60W maximum power dissipation
  • Low on-resistance of 8.2mOhm at 27A and 10V
  • STripFET™ F6 series for high efficiency and performance
  • ±20V maximum gate-to-source voltage (Vgs)
  • 4.5V maximum threshold voltage (Vgs(th)) at 250µA
  • 44nC maximum gate charge (Qg) at 10V
  • 2415pF maximum input capacitance (Ciss) at 25V
  • Automotive grade for reliability in harsh environments
  • REACH unaffected and RoHS3 compliant for environmental compliance

STD64N4F6AG Applications

The STD64N4F6AG is ideal for a wide range of automotive applications, including:

  1. Electric vehicle (EV) motor control
  2. Battery management systems
  3. Powertrain control modules
  4. Inverters and converters
  5. Lighting and power distribution systems
  6. HVAC control systems

Its high efficiency, low on-resistance, and robust automotive-grade performance make it an excellent choice for demanding automotive applications where reliability and performance are critical.

Conclusion of STD64N4F6AG

The STD64N4F6AG is a high-performance N-channel MOSFET from STMicroelectronics, designed specifically for automotive applications. Its combination of high efficiency, low on-resistance, and robust automotive-grade performance make it an ideal choice for demanding applications in electric vehicles, battery management systems, and powertrain control modules. With its STripFET™ F6 series technology, the STD64N4F6AG offers unique advantages over similar models, making it a top choice for engineers designing next-generation automotive systems.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Forward Transconductance - Min
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STD64N4F6AG Documents

Download datasheets and manufacturer documentation for STD64N4F6AG

Ersa STD64N4F6AG      
Ersa Mult Dev Inner Box Chg 9/Dec/2021       Box Label Chg 28/Jul/2016      
Ersa STD64N4F6AG      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service