STMicroelectronics_STW58N60DM2AG

STMicroelectronics
STW58N60DM2AG  
Single FETs, MOSFETs

STMicroelectronics
STW58N60DM2AG
278-STW58N60DM2AG
Ersa
STMicroelectronics-STW58N60DM2AG-datasheets-9397502.pdf
MOSFET N-CH 600V 50A TO247
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    STW58N60DM2AG Description

    STW58N60DM2AG Description

    The STW58N60DM2AG is a high-performance N-channel MOSFET from STMicroelectronics, designed for demanding automotive applications. With a drain-to-source voltage of 600V and a continuous drain current of 50A at 25°C, this MOSFET offers excellent performance in high-voltage, high-current applications. The device features a low Rds(on) of 60mOhm at 25A and 10V Vgs, ensuring efficient power dissipation and minimal power loss. The STW58N60DM2AG is mounted through-hole and comes in a tube package, making it suitable for a wide range of automotive and industrial applications.

    STW58N60DM2AG Features

    • 600V drain-to-source voltage for high-voltage applications
    • 50A continuous drain current at 25°C for high-current applications
    • Low Rds(on) of 60mOhm at 25A and 10V Vgs for efficient power dissipation
    • Through-hole mounting for easy integration into various designs
    • Tube package for convenient handling and storage
    • Automotive-grade device for reliable performance in harsh environments
    • REACH unaffected and RoHS3 compliant for environmental sustainability
    • Moisture sensitivity level 1 for unlimited storage time without baking

    STW58N60DM2AG Applications

    The STW58N60DM2AG is ideal for a variety of high-voltage, high-current applications in the automotive and industrial sectors. Some specific use cases include:

    1. Electric vehicle (EV) charging systems: The high-voltage and high-current ratings make it suitable for charging circuits in EVs.
    2. DC-DC converters: The low Rds(on) and high-voltage ratings enable efficient power conversion in DC-DC converters.
    3. Motor control: The STW58N60DM2AG can be used in motor control applications, such as electric power steering and electric braking systems.
    4. Power supplies: The device's high-voltage and high-current capabilities make it suitable for power supply designs in various industrial and automotive applications.

    Conclusion of STW58N60DM2AG

    The STW58N60DM2AG is a versatile and high-performance N-channel MOSFET from STMicroelectronics, offering excellent performance in high-voltage, high-current applications. Its automotive-grade rating, low Rds(on), and compliance with environmental regulations make it an ideal choice for demanding applications in the automotive and industrial sectors. With its unique features and advantages, the STW58N60DM2AG stands out as a reliable and efficient solution for power electronics design.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    Product
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Grade
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Qualification
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Height
    Maximum Operating Temperature
    Width
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Type
    Tab
    Length
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    ECCN (EU)
    RoHs compliant

    STW58N60DM2AG Documents

    Download datasheets and manufacturer documentation for STW58N60DM2AG

    Ersa Mult Devices Testing 10/May/2018      
    Ersa STW58N60DM2AG      
    Ersa Standard outer labelling 15/Nov/2023      
    Ersa STW58N60DM2AG      

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