The STW58N60DM2AG is a high-performance N-channel MOSFET from STMicroelectronics, designed for demanding automotive applications. With a drain-to-source voltage of 600V and a continuous drain current of 50A at 25°C, this MOSFET offers excellent performance in high-voltage, high-current applications. The device features a low Rds(on) of 60mOhm at 25A and 10V Vgs, ensuring efficient power dissipation and minimal power loss. The STW58N60DM2AG is mounted through-hole and comes in a tube package, making it suitable for a wide range of automotive and industrial applications.
The STW58N60DM2AG is ideal for a variety of high-voltage, high-current applications in the automotive and industrial sectors. Some specific use cases include:
The STW58N60DM2AG is a versatile and high-performance N-channel MOSFET from STMicroelectronics, offering excellent performance in high-voltage, high-current applications. Its automotive-grade rating, low Rds(on), and compliance with environmental regulations make it an ideal choice for demanding applications in the automotive and industrial sectors. With its unique features and advantages, the STW58N60DM2AG stands out as a reliable and efficient solution for power electronics design.
Download datasheets and manufacturer documentation for STW58N60DM2AG