STMicroelectronics_STY60NM50

STMicroelectronics
STY60NM50  
Single FETs, MOSFETs

STMicroelectronics
STY60NM50
278-STY60NM50
MOSFET N-CH 500V 60A MAX247
In Stock : 2

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STY60NM50 Description

STY60NM50 Description

The STY60NM50 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using advanced MDmesh™ technology, it offers a robust 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (case temperature). This device is housed in the MAX247™ package, ensuring efficient thermal management and mechanical durability. With a low on-resistance (Rds(on)) of just 50mΩ at 10V gate drive, it minimizes conduction losses, making it ideal for high-efficiency power conversion systems. The STY60NM50 is RoHS3 compliant and REACH unaffected, meeting stringent environmental and safety standards.

STY60NM50 Features

  • High Voltage & Current Handling: 500V Vdss and 60A Id for robust power switching.
  • Low Rds(on): 50mΩ @ 10V Vgs, reducing power dissipation and improving efficiency.
  • Advanced MDmesh™ Technology: Enhances switching performance and thermal stability.
  • High Power Dissipation: 560W (Tc) for reliable operation under heavy loads.
  • Wide Gate-Source Voltage Range: ±30V Vgs(max) for flexible drive compatibility.
  • Low Gate Charge (Qg): 266nC @ 10V, enabling fast switching and reduced losses.
  • High Input Capacitance (Ciss): 7500pF @ 25V, optimized for high-frequency applications.
  • Robust Packaging: MAX247™ through-hole design for superior heat dissipation and mechanical strength.
  • Wide Operating Temperature: -55°C to 150°C (TJ), suitable for harsh environments.

STY60NM50 Applications

The STY60NM50 excels in high-power applications requiring efficient switching and thermal performance, including:

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives & Inverters: Industrial and automotive motor control systems.
  • Uninterruptible Power Supplies (UPS): High-efficiency energy conversion.
  • Solar Inverters: Renewable energy systems demanding low-loss switching.
  • Welding Equipment: High-current, high-reliability power stages.
  • Industrial Automation: Robust solutions for heavy-duty power management.

Conclusion of STY60NM50

The STY60NM50 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its low Rds(on), high current capability, and advanced MDmesh™ technology make it superior to conventional MOSFETs in high-voltage applications. With excellent thermal performance and flexible drive characteristics, it is a top choice for engineers designing SMPS, motor drives, and renewable energy systems. The MAX247™ package ensures durability, while RoHS3 compliance aligns with modern environmental standards. For demanding power applications, the STY60NM50 delivers unmatched performance and reliability.

Tech Specifications

Unit Weight
Configuration
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Type
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STY60NM50 Documents

Download datasheets and manufacturer documentation for STY60NM50

Ersa IPG-PWR/14/8674 02/Sep/2014      
Ersa STY60NM50      
Ersa STY60NM50 View All Specifications      
Ersa STY60NM50      

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