The STY60NM50 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using advanced MDmesh™ technology, it offers a robust 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (case temperature). This device is housed in the MAX247™ package, ensuring efficient thermal management and mechanical durability. With a low on-resistance (Rds(on)) of just 50mΩ at 10V gate drive, it minimizes conduction losses, making it ideal for high-efficiency power conversion systems. The STY60NM50 is RoHS3 compliant and REACH unaffected, meeting stringent environmental and safety standards.
The STY60NM50 excels in high-power applications requiring efficient switching and thermal performance, including:
The STY60NM50 stands out as a high-efficiency, high-reliability MOSFET for power electronics. Its low Rds(on), high current capability, and advanced MDmesh™ technology make it superior to conventional MOSFETs in high-voltage applications. With excellent thermal performance and flexible drive characteristics, it is a top choice for engineers designing SMPS, motor drives, and renewable energy systems. The MAX247™ package ensures durability, while RoHS3 compliance aligns with modern environmental standards. For demanding power applications, the STY60NM50 delivers unmatched performance and reliability.
Download datasheets and manufacturer documentation for STY60NM50