The STP20NM60FD from STMicroelectronics is a 600V N-channel Power MOSFET designed for high-efficiency switching applications. Built using FDmesh™ technology, it delivers superior performance with low conduction losses and fast switching characteristics. With a continuous drain current (Id) of 20A (at Tc=25°C) and a low on-resistance (Rds(on)) of 290mΩ at 10V Vgs, this MOSFET ensures minimal power dissipation, making it ideal for demanding power conversion tasks. The device is housed in a TO-220AB package, providing excellent thermal management and mechanical robustness for through-hole mounting.
STP20NM60FD Features
High Voltage Rating: 600V Vdss ensures reliable operation in high-voltage circuits.
Wide Vgs Range: ±30V gate-source voltage tolerance enhances flexibility in drive circuitry.
Advanced FDmesh™ Technology: Optimized for reduced Rds(on) and improved thermal performance.
Robust Thermal Handling: 192W max power dissipation (Tc) ensures stability under high-load conditions.
Compliance & Reliability: ROHS3 compliant, REACH unaffected, and MSL1 (unlimited) for environmental and handling safety.
STP20NM60FD Applications
Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters, PFC stages, and inverters.
Motor Drives & Industrial Controls: Efficient switching in motor drive circuits and industrial automation.
Lighting Systems: LED drivers and electronic ballasts requiring high-voltage switching.
Renewable Energy: Solar inverters and energy storage systems benefiting from low-loss operation.
Consumer & Telecom Power: Reliable performance in AC-DC adapters and telecom power supplies.
Conclusion of STP20NM60FD
The STP20NM60FD stands out as a high-performance 600V MOSFET, combining low Rds(on), fast switching, and thermal efficiency—making it a preferred choice for power electronics designers. Its FDmesh™ technology ensures superior reliability in high-stress environments, while the TO-220AB package simplifies thermal management. Whether in industrial, renewable energy, or consumer applications, this MOSFET delivers optimal efficiency, durability, and cost-effectiveness compared to standard MOSFETs.
Tech Specifications
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STP20NM60FD Documents
Download datasheets and manufacturer documentation for STP20NM60FD
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Shipping Rate
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