STMicroelectronics_STL3N65M2

STMicroelectronics
STL3N65M2  
Single FETs, MOSFETs

STMicroelectronics
STL3N65M2
278-STL3N65M2
Ersa
STMicroelectronics-STL3N65M2-datasheets-10174282.pdf
MOSFET N-CH 650V 2.3A POWERFLAT
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    STL3N65M2 Description

    STMicroelectronics STL3N65M2 is a high voltage N-channel MOSFET transistor. It is designed to operate in a wide range of applications, including high voltage switching and power management.

    Description:

    The STL3N65M2 is an N-channel enhancement mode MOSFET transistor. It is housed in a TO-220 package and has a maximum drain-source voltage (VDS) of 650V. The device has a continuous drain current (ID) of 4.1A and a gate-source voltage (VGS) of ±20V.

    Features:

    1. High voltage operation: The STL3N65M2 can operate at high voltages up to 650V, making it suitable for high voltage switching applications.
    2. Low on-state resistance (RDS(on)): The device has a low on-state resistance, which reduces power dissipation and improves efficiency.
    3. Fast switching speed: The STL3N65M2 has a fast switching speed, which makes it suitable for high-frequency applications.
    4. High input impedance: The device has a high input impedance, which allows it to be easily driven by a wide range of control circuits.
    5. Robust construction: The TO-220 package is robust and can withstand high temperatures and mechanical stress.

    Applications:

    1. High voltage switching: The STL3N65M2 can be used in high voltage switching applications, such as in power supplies and motor control circuits.
    2. Power management: The device can be used in power management circuits, such as in battery chargers and power converters.
    3. Motor control: The STL3N65M2 can be used in motor control circuits, such as in industrial automation and robotics.
    4. Lighting applications: The device can be used in lighting applications, such as in LED drivers and ballast circuits.
    5. Automotive applications: The STL3N65M2 can be used in automotive applications, such as in power windows and seat control circuits.

    In summary, the STL3N65M2 is a high voltage N-channel MOSFET transistor that offers high performance and robust construction. It is suitable for a wide range of applications, including high voltage switching, power management, motor control, lighting, and automotive applications.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STL3N65M2 Documents

    Download datasheets and manufacturer documentation for STL3N65M2

    Ersa Mult Dev Wafer Site Add 3/Aug/2018      
    Ersa STL3N65M2      
    Ersa STL3N65M2      

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