STMicroelectronics_STB80NF55-08AG

STMicroelectronics
STB80NF55-08AG  
Single FETs, MOSFETs

STMicroelectronics
STB80NF55-08AG
278-STB80NF55-08AG
Ersa
STMicroelectronics-STB80NF55-08AG-datasheets-2855115.pdf
MOSFET N-CHANNEL 55V 80A D2PAK
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STB80NF55-08AG Description

STB80NF55-08AG Description

The STB80NF55-08AG is a high-performance N-Channel MOSFET from STMicroelectronics, designed for automotive applications. This device is part of the STripFET™ series, offering superior performance and reliability. With a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C, the STB80NF55-08AG is ideal for demanding power management and control applications.

STB80NF55-08AG Features

  • Technology: MOSFET (Metal Oxide), leveraging advanced manufacturing processes for enhanced performance and reliability.
  • Drain to Source Voltage (Vdss): 55V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 80A, providing ample current handling capability.
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 40A, 10V, ensuring low on-resistance for efficient power delivery.
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10V, contributing to fast switching speeds and reduced power loss.
  • Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 15V, minimizing capacitive effects and improving high-frequency performance.
  • Vgs (Max): ±20V, providing robust gate drive compatibility.
  • Vgs(th) (Max) @ Id: 4V @ 250µA, ensuring reliable threshold voltage performance.
  • Power Dissipation (Max): 300W (Tc), suitable for high-power applications.
  • Mounting Type: Surface Mount, facilitating integration into compact designs.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), ensuring long-term reliability in various environmental conditions.
  • REACH Status: REACH Unaffected, complying with European Union regulations.
  • RoHS Status: ROHS3 Compliant, adhering to environmental standards.
  • Grade: Automotive, designed for the stringent requirements of automotive electronics.

STB80NF55-08AG Applications

The STB80NF55-08AG is well-suited for a variety of high-power and high-reliability applications, including:

  • Automotive Power Management: Ideal for managing power in electric and hybrid vehicles, including battery management systems and motor control.
  • Industrial Control Systems: Reliable for high-power motor drives and power conversion applications in industrial settings.
  • Renal Dialysis Equipment: Robust enough for critical medical equipment that demands high reliability and performance.
  • Telecommunications Power Supplies: Capable of handling the power demands of telecommunications infrastructure.

Conclusion of STB80NF55-08AG

The STB80NF55-08AG from STMicroelectronics stands out as a high-performance N-Channel MOSFET, offering a combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its automotive-grade design, compliance with environmental regulations, and robust performance make it an excellent choice for demanding power management and control applications in various industries.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Qualification
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Series
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STB80NF55-08AG Documents

Download datasheets and manufacturer documentation for STB80NF55-08AG

Ersa STB80NF55-08AG, STP80NF55-08AG      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STB80NF55-08AG, STP80NF55-08AG      

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