STMicroelectronics

STD46N6F7  

Single FETs, MOSFETs

STD46N6F7 Description

The STD46N6F7 is a MOSFET (Metal Oxide) N-CH 60V 15A DPAK device manufactured by STMicroelectronics. It features a maximum drain-to-source voltage (Vdss) of 60V, a continuous drain current (Id) of 15A at 25°C, and a maximum power dissipation (Tc) of 60W. The device has an input capacitance (Ciss) of 1065 pF at 30V and a gate charge (Qg) of 17 nC at 10V. The STD46N6F7 is part of the STripFET™ series and is designed for surface mount applications.

STD46N6F7 Features

• Maximum drain-to-source voltage (Vdss) of 60V
• Continuous drain current (Id) of 15A at 25°C
• Maximum power dissipation (Tc) of 60W
• Input capacitance (Ciss) of 1065 pF at 30V
• Gate charge (Qg) of 17 nC at 10V
• STripFET™ series
• Surface mount design
• RoHS3 compliant
• REACH unaffected
• Moisture sensitivity level (MSL) of 1 (unlimited)
• Drive voltage (Max Rds On, Min Rds On) of 10V
• Rds On (Max) of 14mOhm at 7.5A, 10V
• Vgs(th) (Max) of 4V at 250µA
• Vgs (Max) of ±20V

STD46N6F7 Applications

The STD46N6F7 is ideal for applications that require high voltage and current handling capabilities, such as:

1. Power switching and control in automotive and industrial systems
2. Motor control and drive circuits
3. Power supply and converter designs
4. Battery management systems
5. High-voltage protection circuits

Conclusion of STD46N6F7

The STD46N6F7 is a high-performance MOSFET designed for demanding applications that require high voltage and current handling capabilities. Its unique features, such as low Rds On and high input capacitance, make it an excellent choice for power switching and control applications. Although it is now considered obsolete, the STD46N6F7 remains a reliable and efficient solution for various high-voltage and high-current applications in the electronics industry.

STD46N6F7 Documents

Download datasheets and manufacturer documentation for STD46N6F7