STMicroelectronics_STD80N10F7

STMicroelectronics
STD80N10F7  
Single FETs, MOSFETs

STMicroelectronics
STD80N10F7
278-STD80N10F7
Ersa
STMicroelectronics-STD80N10F7-datasheets-7392185.pdf
MOSFET N-CH 100V 70A DPAK
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    STD80N10F7 Description

    The STD80N10F7 is a high-power N-channel MOSFET transistor manufactured by STMicroelectronics. Here is a brief description of the model, its features, and potential applications:

    Model: STD80N10F7

    Description:

    The STD80N10F7 is a high-power N-channel MOSFET transistor designed for use in various power electronic applications. It is a three-terminal device that uses a gate-source voltage to control the current flow between the drain and source terminals.

    Features:

    1. High Power: The STD80N10F7 is designed to handle high power applications, making it suitable for use in demanding environments.
    2. N-Channel: As an N-channel MOSFET, it uses an electron majority charge carrier, which can provide higher efficiency in certain applications compared to P-channel MOSFETs.
    3. High Voltage and Current Ratings: The device has a high voltage and current rating, allowing it to handle significant power loads.
    4. Low On-State Resistance: The low on-state resistance (RDS(on)) of the STD80N10F7 helps minimize power dissipation and improve efficiency.
    5. Robust Design: The transistor is designed to be robust and withstand high temperatures and voltage transients, making it suitable for use in harsh environments.

    Applications:

    The STD80N10F7 can be used in a variety of applications due to its high power and robust design. Some potential applications include:

    1. Motor Control: The high current and voltage ratings make it suitable for controlling the speed and direction of electric motors in industrial and automotive applications.
    2. Power Supplies: It can be used in power supply circuits, such as switching power supplies, to efficiently manage power conversion and regulation.
    3. Inverters: The STD80N10F7 can be used in inverter circuits to convert DC power to AC power for various applications, such as solar panel systems and uninterruptible power supplies (UPS).
    4. Battery Management: It can be used in battery management systems to control the charging and discharging of batteries in electric vehicles or energy storage systems.
    5. Industrial Control: The transistor can be used in various industrial control applications, such as robotics, conveyor systems, and manufacturing equipment, to manage power distribution and motor control.

    Please note that the specific electrical characteristics, such as voltage and current ratings, as well as the thermal characteristics, should be verified from the manufacturer's datasheet to ensure the device meets the requirements of a particular application.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Maximum IDSS (uA)
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    Maximum Drain Source Resistance (MOhm)
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Grade
    ECCN (EU)
    RoHs compliant

    STD80N10F7 Documents

    Download datasheets and manufacturer documentation for STD80N10F7

    Ersa STx80N10F7,STH80N10F7-2      
    Ersa Mult Dev Inner Box Chg 9/Dec/2021       Reel Design Change 22/Aug/2022      
    Ersa STx80N10F7,STH80N10F7-2      

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